公开(公告)号：US09401209B2

公开(公告)日：2016-07-26

申请号：US14826814

申请日：2015-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunil Shim ,  Jang-Gn Yun ,  Jeonghyuk Choi ,  Kwang Soo Seol ,  Jaehoon Jang ,  Jungdal Choi

IPC: H01L29/78 ,  G11C16/04 ,  H01L23/535 ,  H01L27/115

CPC classification number: G11C16/0466 ,  G11C16/0483 ,  H01L23/535 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor memory device is provided including first and second cell strings formed on a substrate, the first and second cell strings jointly connected to a bit line, wherein each of the first and second cell strings includes a ground selection unit, a memory cell, and first and second string selection units sequentially formed on the substrate to be connected to each other, wherein the ground selection unit is connected to a ground selection line, the memory cell is connected to a word line, the first string selection unit is connected to a first string selection line, and the second string selection unit is connected to a second string selection line, and wherein the second string selection unit of the first cell string has a channel dopant region.