公开(公告)号：US09490391B2

公开(公告)日：2016-11-08

申请号：US14731391

申请日：2015-06-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun Lee ,  Min Hwan Kim ,  Eun Deok Sim ,  Ji Heon Oh ,  Heon Ho Lee ,  Ho Chul Lee ,  Jae Sung Hyun

IPC: H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L33/06 ,  H01L33/32 ,  H01L33/08

CPC classification number: H01L33/06 ,  H01L33/08 ,  H01L33/32

Abstract: A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region.

Abstract translation: 半导体发光器件可以包括：第一导电型半导体层; 设置在所述第一导电型半导体层上并且包括多个量子势垒层和交替层叠的多个量子阱层的有源层; 以及设置在有源层上的第二导电型半导体层。 在多个量子势垒层中最靠近第二导电类型半导体层的量子势垒层可以包括第一未掺杂区域和设置在第一未掺杂区域上的第一掺杂区域，并且具有大于或等于 第一个未掺杂的地区。 第一未掺杂区域和第一掺杂区域中的每一个可以包括具有不同能带隙的多个第一单元层和至少一个空穴积聚区域。