公开(公告)号：US11901191B2

公开(公告)日：2024-02-13

申请号：US17535933

申请日：2021-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Hyea Ko ,  Hee Yeon Jeong ,  Jun Hee Cho ,  Gyu-Hee Park ,  Joong Jin Park ,  Byeong Il Yang ,  Youn Joung Cho ,  Ji Yu Choi

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula




wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C1-C4 alkyl group, and N is nitrogen.