公开(公告)号：US20210020462A1

公开(公告)日：2021-01-21

申请号：US16739409

申请日：2020-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon JEONG ,  Mihyun PARK ,  Yongsun KO ,  Kwangwook LEE ,  Kuntack LEE ,  Hayoung JEON ,  Yongjhin CHO ,  Jihoon CHA

IPC: H01L21/67 ,  H01L21/02 ,  B08B3/08

Abstract: A substrate cleaning apparatus includes a support inside a chamber to hold a substrate, a first supply source inside the chamber that includes a first nozzle along a first direction and facing an upper surface of the support, the first nozzle to spray polymer and solvent onto the substrate to form a coating, and a second nozzle at an oblique angle to the first direction and facing an edge of the support to inject a hot gas toward the coating to volatilize the solvent, a second supply source inside the chamber and having a third nozzle facing the upper surface of the support to inject a peeling treatment to the coating to peel the coating from the substrate, and a third supply source inside the chamber and facing a lower surface of the support to inject the hot gas to heat a second surface of the substrate.

公开(公告)号：US20240322004A1

公开(公告)日：2024-09-26

申请号：US18497446

申请日：2023-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiho YOO ,  Kihyung KO ,  Jihoon CHA

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775

CPC classification number: H01L29/66439 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/775

Abstract: A method of manufacturing an integrated circuit device includes forming, on a substrate, a fin-type active region and a stack structure in which sacrificial semiconductor layers and nanosheet semiconductor layers are alternately stacked one-by-one, forming a first local liner on a sidewall of the stack structure to cover a sidewall of a bottom sacrificial semiconductor layer, which is closest to the fin-type active region and expose sidewalls of other sacrificial semiconductor layers, forming a second local liner on the sidewall of the stack structure to cover the sidewalls of the other sacrificial semiconductor layers except for the bottom sacrificial semiconductor layer, exposing the bottom sacrificial semiconductor layer by removing the first local liner, forming a bottom insulating space exposing a fin top surface of the fin-type active region by removing the bottom sacrificial semiconductor layer, and forming a bottom insulating structure in the bottom insulating space.