公开(公告)号：US12051590B2

公开(公告)日：2024-07-30

申请号：US17697019

申请日：2022-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongchul Jeong ,  Sangjin Kim ,  Yigwon Kim ,  Jinhee Jang ,  Taemin Choi

IPC: H01L21/033 ,  G03F7/20 ,  H01L21/02 ,  H01L21/027

CPC classification number: H01L21/0337 ,  G03F7/2002 ,  H01L21/0206 ,  H01L21/0274

Abstract: A method of forming a pattern includes forming an etching object layer on a substrate. A photoresist layer including a metal, oxygen and an organic material is formed on the etching object layer. An exposure process is performed on the photoresist layer. A developing process is performed on the photoresist layer to form a photoresist pattern including a metal oxide. Ozone is provided onto the substrate to remove a residue of the photoresist layer that includes the organic material. The etching object layer is etched using the photoresist pattern as an etching mask.