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公开(公告)号：US20190196554A1
公开(公告)日：2019-06-27
申请号：US16225384
申请日：2018-12-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jong Min SHIN , Seung Wook CHOI , Jin Young BAE , Chang Lae JO
CPC classification number: G06F1/1698 , H04L29/04 , H04L65/403 , H04L67/18 , H04W88/02
Abstract: An electronic apparatus includes a communicator; and a processor configured to: transmit a message including a communication connection order among a plurality of terminals to the plurality of terminals through the communicator, and control the communicator to sequentially perform connections with the plurality of terminals corresponding to association requests respectively received from the plurality of terminals after transmitting the message.
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公开(公告)号：US20250056843A1
公开(公告)日：2025-02-13
申请号：US18438920
申请日：2024-02-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong Min SHIN , Heon Jong SHIN , June Young PARK , Jae Ran JANG , Sang Hee LEE , Kerm RIM , Sung Gyu HAN
IPC: H01L29/786 , H01L21/8234 , H01L23/48 , H01L23/528 , H01L27/088 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/66 , H01L29/775
Abstract: A semiconductor device includes: a lower interlayer insulating layer; first and second active patterns on the lower interlayer insulating layer; a gate electrode on the first and second active patterns; a first source region on a first side of the gate electrode; a second source region on a second side of the gate electrode; a third source region on the first side of the gate electrode; a drain region on the second side of the gate electrode; a first contact adjacent to the gate electrode, and connected to the first and third source regions; a second contact adjacent to the gate electrode, and connected to the second source region; a third contact adjacent to the gate electrode, and connected to the drain region; a lower wiring layer inside the lower interlayer insulating layer; and a through via connecting the lower wiring layer with the first contact.
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