公开(公告)号：US20250056843A1

公开(公告)日：2025-02-13

申请号：US18438920

申请日：2024-02-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Min SHIN ,  Heon Jong SHIN ,  June Young PARK ,  Jae Ran JANG ,  Sang Hee LEE ,  Kerm RIM ,  Sung Gyu HAN

IPC: H01L29/786 ,  H01L21/8234 ,  H01L23/48 ,  H01L23/528 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device includes: a lower interlayer insulating layer; first and second active patterns on the lower interlayer insulating layer; a gate electrode on the first and second active patterns; a first source region on a first side of the gate electrode; a second source region on a second side of the gate electrode; a third source region on the first side of the gate electrode; a drain region on the second side of the gate electrode; a first contact adjacent to the gate electrode, and connected to the first and third source regions; a second contact adjacent to the gate electrode, and connected to the second source region; a third contact adjacent to the gate electrode, and connected to the drain region; a lower wiring layer inside the lower interlayer insulating layer; and a through via connecting the lower wiring layer with the first contact.