公开(公告)号：US11923216B2

公开(公告)日：2024-03-05

申请号：US17892677

申请日：2022-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Min Shin ,  Sang Jin Park ,  Hae Won Choi ,  Jang Jin Lee ,  Ji Hwan Park ,  Kun Tack Lee ,  Koriakin Anton ,  Joon Ho Won ,  Jin Yeong Sung ,  Pil Kyun Heo

IPC: H01L21/67 ,  G03F7/16 ,  H01L21/677

CPC classification number: H01L21/67196 ,  G03F7/168 ,  H01L21/67017 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67225 ,  H01L21/67748

Abstract: An apparatus and method for treating a substrate are provided. The apparatus includes at least one first process chamber configured to supply a developer onto the substrate; at least one second process chamber configured to treat the substrate using a supercritical fluid; a transfer chamber configured to transfer the substrate from the at least one first process chamber to the at least one second process chamber, while the developer supplied in the at least one first process chamber remains on the substrate; and a temperature and humidity control system configured to manage temperature and humidity of the transfer chamber by supplying a first gas of constant temperature and humidity into the transfer chamber.

公开(公告)号：US20230131222A1

公开(公告)日：2023-04-27

申请号：US17876266

申请日：2022-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hae Won CHOI ,  Seung Min Shin ,  Sang Jine Park ,  Jae Won Shin ,  Ji Hwan Park ,  Kun Tack Lee ,  Koriakin Anton ,  Joon Ho Won ,  Pil Kyun Heo

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing apparatus and a substrate processing method are provided, in which a flow rate of CO2 injected into a supercritical drying vessel is controlled through multi-level pressure control. The substrate processing method includes disposing a substrate coated with a chemical liquid in a process chamber, that includes a space in which the substrate is processed; drying the substrate by using a supercritical fluid; and taking the substrate out of the process chamber when the substrate is dried.