公开(公告)号：US11923216B2

公开(公告)日：2024-03-05

申请号：US17892677

申请日：2022-08-22

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Seung Min Shin ,  Sang Jin Park ,  Hae Won Choi ,  Jang Jin Lee ,  Ji Hwan Park ,  Kun Tack Lee ,  Koriakin Anton ,  Joon Ho Won ,  Jin Yeong Sung ,  Pil Kyun Heo

IPC分类号： H01L21/67 ,  G03F7/16 ,  H01L21/677

CPC分类号： H01L21/67196 ,  G03F7/168 ,  H01L21/67017 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67225 ,  H01L21/67748

摘要： An apparatus and method for treating a substrate are provided. The apparatus includes at least one first process chamber configured to supply a developer onto the substrate; at least one second process chamber configured to treat the substrate using a supercritical fluid; a transfer chamber configured to transfer the substrate from the at least one first process chamber to the at least one second process chamber, while the developer supplied in the at least one first process chamber remains on the substrate; and a temperature and humidity control system configured to manage temperature and humidity of the transfer chamber by supplying a first gas of constant temperature and humidity into the transfer chamber.