公开(公告)号：US20180143855A1

公开(公告)日：2018-05-24

申请号：US15812299

申请日：2017-11-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-hoon KIM ,  Ju-hyun KIM ,  Min-seok KIM

IPC: G06F9/50 ,  G06F9/48 ,  G06F9/52

Abstract: A resource management method of an electronic apparatus according to an example embodiment includes storing resource information including at least one resource category for assorting hardware resources and software resources by type and an attribute category indicating attribute information of resources included in the at least one resource category in a memory of the electronic apparatus, and in response to an application requesting a specific resource, allocating the specific resource to the application based on the resource information.

公开(公告)号：US20190131516A1

公开(公告)日：2019-05-02

申请号：US15983255

申请日：2018-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-hwan PARK ,  Ju-hyun KIM ,  Se-chung OH ,  Dong-kyu LEE ,  Jung-min LEE ,  Kyung-il HONG

IPC: H01L43/02 ,  H01L43/12 ,  G11C11/16 ,  H01L27/22 ,  H01L23/538 ,  H01L23/532

Abstract: A variable resistance memory device includes a metal interconnection layer on a substrate, an interlayer insulating layer on the metal interconnection layer and defining a contact hole for exposing a portion of the metal interconnection layer, a barrier metal layer including a plurality of sub-barrier metal layers inside the contact hole, a plug metal layer on the barrier metal layer and burying the contact hole, and a variable resistance structure on the barrier metal layer and the plug metal layer.