公开(公告)号：US10937856B2

公开(公告)日：2021-03-02

申请号：US16424996

申请日：2019-05-29

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jung Hun Choi ,  Young Tak Kim ,  Da Il Eom ,  Sun Jung Lee

IPC分类号： H01L49/02 ,  H01L27/06 ,  H01L29/78

摘要： A semiconductor device and a manufacturing method thereof, the semiconductor device including an insulation layer; a metal resistance pattern on the insulation layer; a spacer on a side wall of the metal resistance pattern; and a gate contact spaced apart from the spacer, the gate contact extending into the insulation layer, wherein the insulation layer includes a projection projecting therefrom, the projection contacting the gate contact.

公开(公告)号：US10332954B2

公开(公告)日：2019-06-25

申请号：US15444455

申请日：2017-02-28

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jung Hun Choi ,  Young Tak Kim ,  Da Il Eom ,  Sun Jung Lee

IPC分类号： H01L49/02 ,  H01L27/06 ,  H01L29/78

摘要： A semiconductor device and a manufacturing method thereof, the semiconductor device including an insulation layer; a metal resistance pattern on the insulation layer; a spacer on a side wall of the metal resistance pattern; and a gate contact spaced apart from the spacer, the gate contact extending into the insulation layer, wherein the insulation layer includes a projection projecting therefrom, the projection contacting the gate contact.

公开(公告)号：US10763254B2

公开(公告)日：2020-09-01

申请号：US15333545

申请日：2016-10-25

申请人： Samsung Electronics Co., Ltd.

发明人： Sung Soo Kim ,  Gi Gwan Park ,  Jung Hun Choi ,  Koung Min Ryu ,  Sun Jung Lee

IPC分类号： H01L27/088 ,  H01L21/8234 ,  H01L23/485 ,  H01L23/528 ,  H01L29/423 ,  H01L27/092 ,  H01L29/739

摘要： A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.

公开(公告)号：US11908858B2

公开(公告)日：2024-02-20

申请号：US16937912

申请日：2020-07-24

申请人： Samsung Electronics Co., Ltd.

发明人： Sung Soo Kim ,  Gi Gwan Park ,  Jung Hun Choi ,  Koung Min Ryu ,  Sun Jung Lee

IPC分类号： H01L27/088 ,  H01L21/8234 ,  H01L23/485 ,  H01L23/528 ,  H01L29/423 ,  H01L27/092 ,  H01L29/739

CPC分类号： H01L27/0886 ,  H01L21/823431 ,  H01L21/823456 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/5283 ,  H01L29/42364 ,  H01L29/42372 ,  H01L27/0924 ,  H01L29/7391

摘要： A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.