公开(公告)号：US12080798B2

公开(公告)日：2024-09-03

申请号：US17667608

申请日：2022-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae Ho Na ,  Sung Soo Kim ,  Sun Ki Min ,  Dong Hyun Roh

IPC: H01L29/78 ,  H01L29/417

CPC classification number: H01L29/7851 ,  H01L29/41791

Abstract: Semiconductor devices and methods of forming the same are provided. The semiconductor devices may include a first fin-type pattern and a second fin-type pattern on a substrate, a first epitaxial pattern on the first fin-type pattern, a second epitaxial pattern on the second fin-type pattern, and a lower field insulating film on the substrate and extends on a sidewall of the first fin-type pattern and a sidewall of the second fin-type pattern, wherein the lower field insulating film includes a protrusion protruding in a third direction. The protrusion of the lower field insulating film may be between the first fin-type pattern and the second fin-type pattern, and a vertical level of a top surface of the protrusion of the lower field insulating film increases and then decreases with increasing distance from the sidewall of the first fin-type pattern.

公开(公告)号：US11600518B2

公开(公告)日：2023-03-07

申请号：US17308128

申请日：2021-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo Kim ,  Chae Ho Na ,  Gyu Hwan Ahn ,  Dong Hyun Roh ,  Sang Jin Hyun

IPC: H01L21/76 ,  H01L21/762 ,  H01L27/088 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having first fin and a second fin spaced apart and extending lengthwise in parallel. A fin remnant is disposed between the first fin and the second fin, extends lengthwise in parallel with the first and second fins, and has a height lower than a height of each of the first fin and the second fin. A first field insulation layer is disposed between a sidewall of the first fin and a first sidewall of the fin remnant and a second field insulating layer is disposed on a sidewall of the second fin. A blocking liner conforms to a sidewall and a bottom surface of a trench bounded by a second sidewall of the fin remnant and a sidewall of the second field insulating layer. A trench insulation layer is disposed on the blocking liner in the trench.

公开(公告)号：US11532328B2

公开(公告)日：2022-12-20

申请号：US16375157

申请日：2019-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Young Jee ,  Sung Ki Roh ,  Min Uk Kim ,  Sung Soo Kim ,  Woong Sik Nam ,  Sung-Gyu Park ,  Se Young Oh

IPC: B05D3/06 ,  G11B7/095 ,  F01C1/12 ,  H01L21/67

Abstract: A multi-curing apparatus includes an actuator, a first chamber including a first energy source head, a second chamber including a second energy source head, a first driver including a first rotation transmission gear gear-engaged with the actuator, and a first driving gear gear-engaged with the first chamber. The apparatus further includes a second driver including a second rotation transmission gear gear-engaged with the actuator, and a second driving gear gear-engaged with the second chamber. The apparatus aligns a position of the first chamber with reference to a position of the second chamber while the first rotation transmission gear, the second rotation transmission gear, and the second driving gear are fixed.

公开(公告)号：US11258497B2

公开(公告)日：2022-02-22

申请号：US17188135

申请日：2021-03-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sung Jeon ,  Wook Bong Lee ,  Min Ki Ahn ,  Sung Soo Kim ,  Joon Suk Kim

IPC: H04B7/06

Abstract: A beam transmitting device improves performance of a communication channel. The beam transmitting device includes a controller configured to transmit a null data packet (NDP) and receive channel information; and a smoothing circuit configured to smooth a plurality of beamforming vectors in the channel information. The smoothing circuit includes a weight calculator configured to calculate a common phase factor using two adjacent beamforming vectors among the plurality of beamforming vectors, and a moving average filter configured to perform the smoothing using the common phase factor.

公开(公告)号：US11018050B2

公开(公告)日：2021-05-25

申请号：US16386704

申请日：2019-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo Kim ,  Chae Ho Na ,  Gyu Hwan Ahn ,  Dong Hyun Roh ,  Sang Jin Hyun

IPC: H01L29/66 ,  H01L21/762 ,  H01L27/088

Abstract: A semiconductor device includes a substrate having first fin and a second fin spaced apart and extending lengthwise in parallel. A fin remnant is disposed between the first fin and the second fin, extends lengthwise in parallel with the first and second fins, and has a height lower than a height of each of the first fin and the second fin. A first field insulation layer is disposed between a sidewall of the first fin and a first sidewall of the fin remnant and a second field insulating layer is disposed on a sidewall of the second fin. A blocking liner conforms to a sidewall and a bottom surface of a trench bounded by a second sidewall of the fin remnant and a sidewall of the second field insulating layer. A trench insulation layer is disposed on the blocking liner in the trench.

公开(公告)号：US10862568B2

公开(公告)日：2020-12-08

申请号：US16882645

申请日：2020-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo Kim ,  Min Chull Paik ,  Hyoungjoo Lee ,  Hyun Hoon Ha ,  Won Hyung Heo

IPC: H04B7/08 ,  H04L5/00 ,  H04B7/06

Abstract: An electronic device includes a communication circuit, a plurality of antennas that are fed with power from the communication circuit, and a processor that controls the communication circuit. The processor is configured to receive a first signal for indicating initiation of configuration for carrier aggregation. The processor is also configured to change the configuration of at least one of the antennas or the communication circuit to perform the carrier aggregation if a second signal for indicating operation initiation of the carrier aggregation is received from a base station.

公开(公告)号：US10727349B2

公开(公告)日：2020-07-28

申请号：US16426819

申请日：2019-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Soo Kim ,  Dong Hyun Roh ,  Koung Min Ryu ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L29/423 ,  H01L27/092 ,  H01L27/12

Abstract: A semiconductor device includes an active fin on a substrate, a device isolation film covering a lower portion of the active fin, a gate structure covering the active fin and the device isolation film, and a gate spacer on a side wall of the gate structure, wherein a side wall of the gate structure disposed on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate structure to a bottom of the gate structure, and an inner side wall of the gate spacer on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate spacer to a bottom of the gate spacer while forming an acute angle with a bottom surface of the gate spacer.

公开(公告)号：US20180069616A1

公开(公告)日：2018-03-08

申请号：US15699575

申请日：2017-09-08

Applicant: Samsung Electronics Co., Ltd

Inventor： Sung Soo Kim ,  Min Chull Paik ,  Hyoungjoo Lee ,  Hyun Hoon Ha ,  Won Hyung Heo

IPC: H04B7/08 ,  H04L5/00

Abstract: An electronic device includes a communication circuit, a plurality of antennas that are fed with power from the communication circuit, and a processor that controls the communication circuit. The processor is configured to receive a first signal for indicating initiation of configuration for carrier aggregation. The processor is also configured to change the configuration of at least one of the antennas or the communication circuit to perform the carrier aggregation if a second signal for indicating operation initiation of the carrier aggregation is received from a base station.

公开(公告)号：US12237210B2

公开(公告)日：2025-02-25

申请号：US17740095

申请日：2022-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chae Ho Na ,  Sung Soo Kim ,  Gyu Hwan Ahn ,  Dong Hyun Roh

IPC: H01L21/762 ,  H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L29/786

Abstract: A semiconductor device includes a substrate, a first fin, and a second fin. The first and second fins are spaced apart from each other in a first direction on the substrate and extend in a second direction intersecting the first direction. The semiconductor device further includes a first shallow trench formed between the first and second fins, and a field insulating film which fills at least a part of the first shallow trench. The field insulating film includes a first portion, a second portion adjacent to the first portion, and a third portion adjacent to the second portion and adjacent to a side wall of the first shallow trench. The first portion includes a central portion of an upper surface of the field insulating film in the first direction. The upper surface of the field insulating film is in a shape of a brace recessed toward the substrate.

公开(公告)号：US12080767B2

公开(公告)日：2024-09-03

申请号：US17406310

申请日：2021-08-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Soo Kim ,  Joohan Kim ,  Gyuhwan Ahn ,  Ik Soo Kim ,  Jongmin Baek

IPC: H01L29/41 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/41775 ,  H01L29/42392 ,  H01L29/78696 ,  H01L29/7851 ,  H01L29/7853

Abstract: A semiconductor device includes a first active pattern disposed on a substrate, a device isolation layer filling a trench that defines the first active pattern, a first channel pattern and a first source/drain pattern disposed on the first active pattern in which the first channel pattern includes semiconductor patterns stacked and spaced apart from each other, a gate electrode that extends and runs across the first channel pattern, a gate dielectric layer disposed between the first channel pattern and the gate electrode, and a first passivation pattern disposed between the device isolation layer and a first sidewall of the first active pattern. The first passivation pattern includes an upper part that protrudes upwardly from the device isolation layer, and a lower part buried in the device isolation layer. The gate dielectric layer covers the upper part of the first passivation pattern.