公开(公告)号：US20240274757A1

公开(公告)日：2024-08-15

申请号：US18371835

申请日：2023-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiho YOU ,  Sanghyun KIM ,  Juwon JEONG ,  Sungwoo CHOl

IPC: H01L33/50 ,  H01L33/46

CPC classification number: H01L33/502 ,  H01L33/46

Abstract: A light-emitting device includes: a semiconductor light-emitting structure configured to emit light having a first wavelength; a wavelength conversion layer configured to convert the light which has the first wavelength into light having a second wavelength that is greater than the first wavelength; and a multi-inorganic-film coating layer spaced apart from a light-emitting surface with the wavelength conversion layer therebetween. The multi-inorganic-film coating layer includes a distributed Bragg reflector structure in which first and second inorganic films are alternately stacked, and an uppermost inorganic film farthest from the wavelength conversion layer from among the plurality of inorganic films has a greatest thickness in a first direction perpendicular to the light-emitting surface of the semiconductor light-emitting structure. The first refractive index is selected from a range of about 1.1 to about 1.5, and the second refractive index is selected from a range of about 2.0 to about 3.0.