PACKAGE BOX ASSEMBLY COMPRISING HANGER
    1.
    发明公开

    公开(公告)号:US20230365295A1

    公开(公告)日:2023-11-16

    申请号:US18359265

    申请日:2023-07-26

    CPC classification number: B65D5/52 B65D5/4208

    Abstract: A package box assembly is provided. The package box assembly includes a first box comprising an accommodation portion defined by a plate and a side wall disposed to surround the plate along the periphery of the plate and having a designated height, a second box accommodated in the accommodation portion, a hanger disposed in a first space of the accommodation portion to protrude through an opening formed in the side wall, an elastic member disposed in the first space to press the hanger toward the opening, and a sealing member removably disposed on the side wall to seal the opening. The hanger is accommodated in the first space while being pushed by pressure from the elastic member. In case that the sealing member is removed, the hanger at least partially protrudes to the outside of the first box via the opening by the pushing force of the elastic member.

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE ASSEMBLY INCLUDING THE SAME

    公开(公告)号:US20230253535A1

    公开(公告)日:2023-08-10

    申请号:US17979463

    申请日:2022-11-02

    CPC classification number: H01L33/505 H01L27/156 H01L33/10 H01L33/62 H01L33/382

    Abstract: Provided is a semiconductor light emitting device including a base layer, a light emitting structure including a first semiconductor layer having a first conductivity, an active layer, and a second semiconductor layer having a second conductivity different from the first conductivity, a wavelength converting layer on the light emitting structure, a separation wall disposed adjacent to side surfaces of the wavelength converting layer, a first electrode metal layer on a lower surface of the first semiconductor layer, the first electrode metal layer including a reflection structure, and a second electrode metal layer electrically connected to the second semiconductor layer via through holes penetrating the first electrode metal layer, the first semiconductor layer, and the active layer, and exposing the second semiconductor layer, wherein the semiconductor light emitting device is configured to implement gradation in a first direction based on adjusting at least one of the light emitting structure on an upper surface of the second semiconductor layer, the reflection structure, the separation wall, and a structure included in the light emitting structure..

    RETICLE IN AN APPARATUS FOR EXTREME ULTRAVIOLET EXPOSURE

    公开(公告)号:US20210397076A1

    公开(公告)日:2021-12-23

    申请号:US17173245

    申请日:2021-02-11

    Abstract: A reticle in an apparatus for extreme ultraviolet (EUV) exposure includes a substrate having an image area and a black border area surrounding the image area, a multi-layer structure on the image area and the black border area of the substrate, the multi-layer structure to reflect EUV light, a capping layer covering the multi-layer structure, first absorber layer patterns on the capping layer in the image area and the black border area, and an absorber structure on the capping layer in the black border area, the absorber structure including one of the first absorber layer patterns, a hard mask pattern, and a second absorber layer pattern sequentially stacked, the absorber structure covering an entire upper surface of the capping layer in the black border area.

    LIGHT-EMITTING DEVICE
    5.
    发明公开

    公开(公告)号:US20240274757A1

    公开(公告)日:2024-08-15

    申请号:US18371835

    申请日:2023-09-22

    CPC classification number: H01L33/502 H01L33/46

    Abstract: A light-emitting device includes: a semiconductor light-emitting structure configured to emit light having a first wavelength; a wavelength conversion layer configured to convert the light which has the first wavelength into light having a second wavelength that is greater than the first wavelength; and a multi-inorganic-film coating layer spaced apart from a light-emitting surface with the wavelength conversion layer therebetween. The multi-inorganic-film coating layer includes a distributed Bragg reflector structure in which first and second inorganic films are alternately stacked, and an uppermost inorganic film farthest from the wavelength conversion layer from among the plurality of inorganic films has a greatest thickness in a first direction perpendicular to the light-emitting surface of the semiconductor light-emitting structure. The first refractive index is selected from a range of about 1.1 to about 1.5, and the second refractive index is selected from a range of about 2.0 to about 3.0.

    ELECTRONIC DEVICE INCLUDING INDICATOR LABEL

    公开(公告)号:US20250148940A1

    公开(公告)日:2025-05-08

    申请号:US19002254

    申请日:2024-12-26

    Abstract: An electronic device includes: a housing including a through hole connecting an outside of the electronic device and an inside of the electronic device; a printed circuit board within the housing; an interface bracket including a first portion within the through hole and a second portion facing a first surface of the printed circuit board; a sealing member around the first portion of the interface bracket and contacting an inner surface of the through hole; and an indicator label on the first surface of the printed circuit board and a lateral surface of the printed circuit board facing the through hole, where the indicator label is changeable by moisture introduced from the outside of the electronic device through the through hole.

    METHOD OF CONTROLLING TEMPERATURE OF TISSUE AND TEMPERATURE CONTROLLING APPARATUS USING THE METHOD
    8.
    发明申请
    METHOD OF CONTROLLING TEMPERATURE OF TISSUE AND TEMPERATURE CONTROLLING APPARATUS USING THE METHOD 审中-公开
    使用方法控制组织温度和温度控制装置的方法

    公开(公告)号:US20150157882A1

    公开(公告)日:2015-06-11

    申请号:US14564608

    申请日:2014-12-09

    Abstract: Provided are a method of controlling a temperature of tissue and a temperature controlling apparatus using the method. The method includes measuring a temperature of a target tissue, determining an intensity of ultrasound irradiation with respect to the target tissue based on a target temperature of the target tissue and the measured temperature of the target tissue, and irradiating the ultrasound irradiation having the determined intensity to the target tissue.

    Abstract translation: 提供了使用该方法控制组织温度的方法和温度控制装置。 该方法包括测量目标组织的温度,基于目标组织的目标温度和目标组织的测量温度确定相对于目标组织的超声照射的强度,以及照射具有确定的强度的超声照射 到目标组织。

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