公开(公告)号：US20170174984A1

公开(公告)日：2017-06-22

申请号：US15378791

申请日：2016-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee LEE ,  Hyun A. KANG ,  Tae Hyung KIM ,  Eun Joo JANG ,  Nayoun WON ,  Jiho YOU

IPC: C09K11/02 ,  C08K3/16 ,  C08K9/04 ,  B05D3/00 ,  H01L33/56 ,  C08L23/08 ,  C09K11/88 ,  C09K11/70 ,  C08K3/32 ,  H01L33/50

CPC classification number: C09K11/025 ,  B05D3/007 ,  B82Y20/00 ,  B82Y40/00 ,  C08K3/16 ,  C08K3/32 ,  C08K9/04 ,  C08K2201/001 ,  C08K2201/005 ,  C08K2201/011 ,  C08L23/0869 ,  C09K11/02 ,  C09K11/70 ,  C09K11/883 ,  H01L33/501 ,  H01L33/502 ,  H01L33/56 ,  H01L2933/0041 ,  H01L2933/005 ,  Y10S977/774 ,  Y10S977/892 ,  Y10S977/95

Abstract: A quantum dot-polymer micronized composite includes a first polymer matrix; a plurality of quantum dots dispersed in the first polymer matrix; and at least one of an additive selected from a clay particle embedded in the first polymer matrix and a metal halide dispersed in the first polymer matrix, wherein the quantum dot-polymer micronized composite has an average particle size of less than or equal to about 100 micrometers, a production method thereof, and an article and an electronic device including the micronized composite are provided.

公开(公告)号：US20240274757A1

公开(公告)日：2024-08-15

申请号：US18371835

申请日：2023-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiho YOU ,  Sanghyun KIM ,  Juwon JEONG ,  Sungwoo CHOl

IPC: H01L33/50 ,  H01L33/46

CPC classification number: H01L33/502 ,  H01L33/46

Abstract: A light-emitting device includes: a semiconductor light-emitting structure configured to emit light having a first wavelength; a wavelength conversion layer configured to convert the light which has the first wavelength into light having a second wavelength that is greater than the first wavelength; and a multi-inorganic-film coating layer spaced apart from a light-emitting surface with the wavelength conversion layer therebetween. The multi-inorganic-film coating layer includes a distributed Bragg reflector structure in which first and second inorganic films are alternately stacked, and an uppermost inorganic film farthest from the wavelength conversion layer from among the plurality of inorganic films has a greatest thickness in a first direction perpendicular to the light-emitting surface of the semiconductor light-emitting structure. The first refractive index is selected from a range of about 1.1 to about 1.5, and the second refractive index is selected from a range of about 2.0 to about 3.0.