VERTICAL SEMICONDUCTOR DEVICE
    1.
    发明申请

    公开(公告)号:US20250081469A1

    公开(公告)日:2025-03-06

    申请号:US18812283

    申请日:2024-08-22

    Abstract: A vertical semiconductor device includes: a plurality of insulation patterns on a substrate, the plurality of insulation patterns being spaced apart from each other in a vertical direction; a plurality of channel structures being spaced apart from each other in a first direction, each of the plurality of channel structures including interface insulation patterns, and the plurality of channel structures disposed in a first trench extending in the first direction and passing through the insulation patterns in the vertical direction; a ferroelectric structure on an outer surface of each of the plurality channel structures, the ferroelectric structure protruding in a direction toward a gap between some of the insulation patterns in the vertical direction; and a conductive pattern on a sidewall of the ferroelectric structure, the conductive pattern filling the gap in the vertical direction.

    SEMICONDUCTOR DEVICE INCLUDING A FORROELECTRIC TRANSISTOR

    公开(公告)号:US20230413524A1

    公开(公告)日:2023-12-21

    申请号:US18186849

    申请日:2023-03-20

    Inventor: KIJOON KIM

    CPC classification number: H10B12/315 H10B12/482 H10B12/488 H01L29/78391

    Abstract: A semiconductor device includes bit lines arranged on a substrate and extending in a first horizontal direction; channel layers respectively arranged on the plurality of bit lines; word lines respectively arranged on the plurality of channel layers, and extending in a second horizontal direction; and ferroelectric layers arranged between the plurality of channel layers and the plurality of word lines, wherein the plurality of ferroelectric layers comprise a base dielectric layer and a nanoparticle, the nanoparticle dispersed and arranged in the base dielectric layer, respectively, the nanoparticle has a core-shell structure including a core and a shell.

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