公开(公告)号：US20230017277A1

公开(公告)日：2023-01-19

申请号：US17935561

申请日：2022-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JINBUM KIM ,  SEOKHOON KIM ,  KWANHEUM LEE ,  CHOEUN LEE ,  SUJIN JUNG

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/167 ,  H01L29/786 ,  H01L29/06

Abstract: A semiconductor device includes a channel, a first source/drain structure on a first side surface of the channel, a second source/drain structure on a second side surface of the channel, a gate structure surrounding the channel, an inner spacer layer on a side surface of the gate structure, and an outer spacer layer on an outer surface of the inner spacer layer. The first source/drain structure includes a first source/drain layer on the channel and a second source/drain layer on the first source/drain layer, and on a plane of the semiconductor device that passes through the channel, at least one of a first boundary line of the first source/drain layer in contact with the second source/drain layer and a second boundary line of the first source/drain layer in contact with the channel may be convex, extending toward the channel.