公开(公告)号：US20220207228A1

公开(公告)日：2022-06-30

申请号：US17522185

申请日：2021-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang-Min Jung ,  Kyo Il Koo ,  Sang-Wook Park

IPC: G06F30/392 ,  G06F30/398

Abstract: Provided is a method of manufacturing a semiconductor device. the method comprises receiving layout data including a plurality of pieces of pattern data, the plurality of pieces of pattern data having through first to Nth unique patterns (N is a natural number greater than or equal to two), calculating first to Nth density values of the first to Nth unique patterns from the layout data and calculating first to Nth populations of the first to Nth unique patterns from the layout data, performing sampling by selecting some unique patterns among the first to Nth unique patterns, the selecting based on the first to Nth density values and the first to Nth populations, and performing etch modeling on sampled patterns of the plurality of pieces of pattern data, the sampled patterns corresponding to the selected unique patterns.

公开(公告)号：US12223249B2

公开(公告)日：2025-02-11

申请号：US17522185

申请日：2021-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang-Min Jung ,  Kyo Il Koo ,  Sang-Wook Park

IPC: G06F30/392 ,  G06F30/398 ,  G06F119/18

Abstract: Provided is a method of manufacturing a semiconductor device. the method comprises receiving layout data including a plurality of pieces of pattern data, the plurality of pieces of pattern data having through first to Nth unique patterns (N is a natural number greater than or equal to two), calculating first to Nth density values of the first to Nth unique patterns from the layout data and calculating first to Nth populations of the first to Nth unique patterns from the layout data, performing sampling by selecting some unique patterns among the first to Nth unique patterns, the selecting based on the first to Nth density values and the first to Nth populations, and performing etch modeling on sampled patterns of the plurality of pieces of pattern data, the sampled patterns corresponding to the selected unique patterns.

公开(公告)号：US11599017B2

公开(公告)日：2023-03-07

申请号：US16952330

申请日：2020-11-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Yong Lee ,  Seo Rim Moon ,  Kyung Jae Park ,  Soo Ryong Lee ,  Kang-Min Jung

IPC: G03F1/36 ,  H01L21/027 ,  G03F7/20

Abstract: An optical proximity correction method includes extracting first patterns from a pattern mask, performing lithography on at least a part of the first patterns to form first-first patterns, forming the first-first patterns at positions where the first patterns are formed, and performing correction on the pattern mask on which the first-first patterns are formed.