公开(公告)号：US09887080B2

公开(公告)日：2018-02-06

申请号：US15372434

申请日：2016-12-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kang-hun Moon ,  Yong-suk Tak ,  Gi-gwan Park

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/28

CPC classification number: H01L21/02126 ,  C23C16/30 ,  C23C16/45531 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28247 ,  H01L29/6656 ,  H01L29/66795

Abstract: A method of forming a SiOCN material layer and a method of fabricating a semiconductor device are provided, the method of forming a SiOCN material layer including supplying a silicon source onto a substrate; supplying a carbon source onto the substrate; supplying an oxygen source onto the substrate; and supplying a nitrogen source onto the substrate, wherein the silicon source includes a non-halogen silylamine, a silane compound, or a mixture thereof.