公开(公告)号：US09892795B2

公开(公告)日：2018-02-13

申请号：US15350134

申请日：2016-11-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hyun Joo ,  KeeHo Jung

IPC: G11C16/06 ,  G11C16/26 ,  G11C16/14 ,  G11C16/04 ,  G11C16/08 ,  G11C16/34

CPC classification number: G11C16/26 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/14 ,  G11C16/16 ,  G11C16/3445

Abstract: A nonvolatile memory device includes a memory cell array, a row decoder, and page buffer, and control logic. The memory cell array includes cell strings connected to select lines. Each select line is connected to two or more cell strings, each cell string includes memory cells connected to a plurality of word lines, and a select transistor is connected to a corresponding one of the select lines. The row decoder sequentially selects the select lines in a read operation. A page buffer obtains a read result of the two or more cell strings when a corresponding select line is selected and accumulates read results of the cell strings when the select lines are sequentially selected. The control logic controls a subsequent operation based on the accumulated read results.