公开(公告)号：US20130214317A1

公开(公告)日：2013-08-22

申请号：US13764228

申请日：2013-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Soo Kim ,  Joon-Seop Kwak ,  Ki Man Kang ,  Jin Hyun Lee ,  Yu Seung Kim ,  Cheol Soo Sone

IPC: H01L33/64

CPC classification number: H01L33/641 ,  H01L33/14 ,  H01L33/32

Abstract: There is provided a nitride semiconductor light emitting device including: a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween; n-type and p-type electrodes electrically connected to the n-type and p-type nitride semiconductors, respectively; and an n-type ohmic contact layer formed between the n-type nitride semiconductor layer and the n-type electrode and having a first layer formed of a material containing In and a second layer formed on the first layer and formed of a material containing W.According to an aspect of the invention, there is provided a nitride semiconductor light emitting device that has an n-type electrode having thermal stability and excellent electrical characteristics without heat treatment.According to another aspect of the invention, there is provided a method of manufacturing a nitride semiconductor light emitting device optimized to obtain the excellent thermal and electrical characteristics.