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    Semiconductor light emitting device having multi-cell array and method of manufacturing the same
    1.
    发明授权
    Semiconductor light emitting device having multi-cell array and method of manufacturing the same 有权
    具有多单元阵列的半导体发光器件及其制造方法

    公开(公告)号：US09123623B2

    公开(公告)日：2015-09-01

    申请号：US13933887

    申请日：2013-07-02

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Su Hyun Jo ,  Jong Ho Lee ,  Jin Hyun Lee ,  Chan Mook Lim ,  Jin Hwan Kim

    IPC分类号： H01L29/15 ,  H01L27/15 ,  H01L33/00 ,  H01L33/20

    CPC分类号： H01L27/15 ,  H01L27/156 ,  H01L33/005 ,  H01L33/20 ,  H01L2933/0016

    摘要： A method of manufacturing a semiconductor light emitting device having a multi-cell array, including: sequentially forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a substrate; etching and removing portions of the second conductive semiconductor layer and the active layer so as to expose portions of an upper surface of the first conductive semiconductor layer corresponding to respective regions of the second conductive semiconductor layer spaced apart from one another; and separating light emitting cells by partially etching the exposed portions of the first conductive semiconductor layer, wherein the separating of the light emitting cells is not performed at an edge portion of the substrate.

    摘要翻译： 一种制造具有多单元阵列的半导体发光器件的方法，包括：在衬底上依次形成第一导电半导体层，有源层和第二导电半导体层; 蚀刻和去除所述第二导电半导体层和所述有源层的部分，以便暴露所述第一导电半导体层的与所述第二导电半导体层彼此间隔开的相应区域的上表面的部分; 以及通过部分蚀刻所述第一导电半导体层的暴露部分来分离发光单元，其中在所述基板的边缘部分处不发生所述发光单元的分离。

    Semiconductor light emitting device having multi-cell array
    2.
    发明授权
    Semiconductor light emitting device having multi-cell array 有权
    具有多单元阵列的半导体发光器件

    公开(公告)号：US08957431B2

    公开(公告)日：2015-02-17

    申请号：US13786542

    申请日：2013-03-06

    申请人： Samsung Electronics Co., Ltd.

    发明人： Chan Mook Lim ,  Jong Ho Lee ,  Jin Hwan Kim ,  Young Chul Shin ,  Su Hyun Jo ,  Jin Hyun Lee

    IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L33/38

    CPC分类号： H01L27/153 ,  H01L33/38

    摘要： A semiconductor light emitting device (LED) includes a first light emitting cell having a first plurality of electrodes. A second light emitting cell includes a second plurality of electrodes. The first and second light emitting cells are disposed on the substrate and are physically separated from each other. A first interconnection unit electrically connects the first plurality of electrodes to the second plurality of the electrodes.

    摘要翻译： 半导体发光器件（LED）包括具有第一多个电极的第一发光元件。 第二发光单元包括第二多个电极。 第一和第二发光单元被布置在基板上并且在物理上彼此分离。 第一互连单元将第一多个电极电连接到第二多个电极。

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20130214317A1

    公开(公告)日：2013-08-22

    申请号：US13764228

    申请日：2013-02-11

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Hyun Soo Kim ,  Joon-Seop Kwak ,  Ki Man Kang ,  Jin Hyun Lee ,  Yu Seung Kim ,  Cheol Soo Sone

    IPC分类号： H01L33/64

    CPC分类号： H01L33/641 ,  H01L33/14 ,  H01L33/32

    摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween; n-type and p-type electrodes electrically connected to the n-type and p-type nitride semiconductors, respectively; and an n-type ohmic contact layer formed between the n-type nitride semiconductor layer and the n-type electrode and having a first layer formed of a material containing In and a second layer formed on the first layer and formed of a material containing W.According to an aspect of the invention, there is provided a nitride semiconductor light emitting device that has an n-type electrode having thermal stability and excellent electrical characteristics without heat treatment.According to another aspect of the invention, there is provided a method of manufacturing a nitride semiconductor light emitting device optimized to obtain the excellent thermal and electrical characteristics.

    SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY
    4.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY 有权
    具有多个细胞阵列的半导体发光器件

    公开(公告)号：US20130234170A1

    公开(公告)日：2013-09-12

    申请号：US13786542

    申请日：2013-03-06

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Chan Mook Lim ,  Jong Ho Lee ,  Jin Hwan Kim ,  Young Chul Shin ,  Su Hyun Jo ,  Jin Hyun Lee

    IPC分类号： H01L27/15

    CPC分类号： H01L27/153 ,  H01L33/38

    摘要： A semiconductor light emitting device (LED) includes a first light emitting cell having a first plurality of electrodes. A second light emitting cell includes a second plurality of electrodes. The first and second light emitting cells are disposed on the substrate and are physically separated from each other. A first interconnection unit electrically connects the first plurality of electrodes to the second plurality of the electrodes.

    摘要翻译： 半导体发光器件（LED）包括具有第一多个电极的第一发光单元。 第二发光单元包括第二多个电极。 第一和第二发光单元被布置在基板上并且在物理上彼此分离。 第一互连单元将第一多个电极电连接到第二多个电极。

    Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same
    5.
    再颁专利
    Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same 有权

    公开(公告)号：USRE47417E1

    公开(公告)日：2019-06-04

    申请号：US14835327

    申请日：2015-08-25

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Pun Jae Choi ,  Jin Hyun Lee ,  Ki Yeol Park ,  Myong Soo Cho

    IPC分类号： H01L29/20 ,  F02M19/02 ,  F02M9/127

    摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

    Semiconductor light emitting device
    8.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US09070835B2

    公开(公告)日：2015-06-30

    申请号：US14146689

    申请日：2014-01-02

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Ju Heon Yoon ,  Sang Yeon Kim ,  Seung Hwan Lee ,  Jin Hyun Lee ,  Wan Tae Lim ,  Hyun Kwon Hong

    IPC分类号： H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/20

    CPC分类号： H01L33/382 ,  H01L33/20 ,  H01L33/22 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/13 ,  H01L2933/0016

    摘要： A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.

    摘要翻译： 一种半导体发光器件，包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 连接到第一导电类型半导体层的第一电极; 第二电极，包括连接到第二导电类型半导体层的接触层，设置在接触层上的覆盖层和设置在覆盖层上的金属缓冲层，金属缓冲层包围覆盖层的上表面和侧表面 ; 设置在所述发光结构上以使得所述第一和第二电极露出的第一绝缘层; 以及设置在所述第一绝缘层上的第二绝缘层，使得所述第一电极的至少一部分和所述金属缓冲层的至少一部分露出。