公开(公告)号：US20240249925A1

公开(公告)日：2024-07-25

申请号：US18390956

申请日：2023-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEHYUN KIM ,  Kookjin Ann ,  Suji Gim ,  Taijong Sung ,  Sunwoo Yook ,  Young Heo

IPC: H01J37/32

CPC classification number: H01J37/32844 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32899 ,  H01J2237/327

Abstract: An exhaust gas processing apparatus includes a first chamber and a second chamber in parallel between a processing chamber and an exhaust pump, at least one foreline connecting the first chamber and the second chamber to the processing chamber and the exhaust pump, a first plasma source connected to the first chamber and the second chamber, and a second plasma source connected to the first chamber and the second chamber, wherein the first plasma source generates a first treatment material, and the second plasma source generates a second treatment material, different from the first treatment material.