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1.
公开(公告)号:US20240038492A1
公开(公告)日:2024-02-01
申请号:US18121103
申请日:2023-03-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: HYUNGJOON KIM , KIYONG KIM , YOUNGKWON KIM , JAEHYUN KIM , YOODONG YANG , MINSUCK YOO , JONGHYUN LEE , ILJUN JEON , HEE JONG JEONG
IPC: H01J37/32
CPC classification number: H01J37/32082 , H01J37/32532 , H01J37/32724 , H01J2237/3321
Abstract: A substrate supporting apparatus includes a heating plate, a radio frequency (RF) electrode in the heating plate, and an RF delivery structure in contact with a bottom surface of the RF electrode. The heating plate includes a first insertion hole, which is recessed into the heating plate from a bottom surface of the heating plate to expose the bottom surface of the RF electrode. The RF delivery structure includes an RF rod, a portion of which is inserted in the first insertion hole, and through which an RF power is supplied to the RF electrode. The RF rod includes a first material, and a relative permeability of the first material is less than 100, a volume resistivity of the first material is smaller than 70 nΩm, and a melting point of the first material is higher than 1400° C.
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2.
公开(公告)号:US20240249925A1
公开(公告)日:2024-07-25
申请号:US18390956
申请日:2023-12-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: JAEHYUN KIM , Kookjin Ann , Suji Gim , Taijong Sung , Sunwoo Yook , Young Heo
IPC: H01J37/32
CPC classification number: H01J37/32844 , H01J37/32449 , H01J37/32623 , H01J37/32899 , H01J2237/327
Abstract: An exhaust gas processing apparatus includes a first chamber and a second chamber in parallel between a processing chamber and an exhaust pump, at least one foreline connecting the first chamber and the second chamber to the processing chamber and the exhaust pump, a first plasma source connected to the first chamber and the second chamber, and a second plasma source connected to the first chamber and the second chamber, wherein the first plasma source generates a first treatment material, and the second plasma source generates a second treatment material, different from the first treatment material.
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