公开(公告)号：US20230395667A1

公开(公告)日：2023-12-07

申请号：US18117837

申请日：2023-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyu-Hee HAN ,  Bong Kwan Baek ,  Jung Hwan Chun ,  Koung Min RYN ,  Jong Min Baek ,  Jung Hoo Shin ,  Jun Hyuk Lim ,  Sang Shin Jang

IPC: H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L29/775 ,  H01L29/78

CPC classification number: H01L29/41733 ,  H01L29/42392 ,  H01L29/78696 ,  H01L29/0673 ,  H01L29/775 ,  H01L29/41791 ,  H01L29/7851 ,  H01L29/41775

Abstract: Provided is a semiconductor device including an active pattern extended in a first direction, a plurality of gate structures including a gate electrode and a gate spacer disposed to be spaced apart from each other in the first direction on the active pattern and extended in a second direction, a source/drain pattern on the active pattern, a source/drain contact on the source/drain pattern, and a contact liner structure extended along a sidewall of the source/drain contact, being in contact with the sidewall of the source/drain contact. The contact liner structure includes a first contact liner and a second contact liner on the first contact liner. The first contact liner includes a first bottom portion, and a first vertical portion protruded from the first bottom portion and extended in a third direction. A lower surface of the contact liner structure is higher than an upper surface of the source/drain pattern.