公开(公告)号：US12176021B2

公开(公告)日：2024-12-24

申请号：US17875908

申请日：2022-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Pil Lee ,  Kwang Sook Noh

IPC: G11C11/409 ,  G11C7/18 ,  G11C11/408 ,  G11C11/4091 ,  G11C11/4094 ,  G11C11/4096 ,  G11C11/4097

Abstract: A volatile memory device having a reduced area may include; a row decoder extending in a first direction, a column decoder extending in a second direction, a cell region between the row decoder and the column decoder and including a first sense amplifier and a first bit line connected to the first sense amplifier, and a first peripheral circuit region spaced apart from the cell region in the first direction and including includes a first complementary bit line connected to the first sense amplifier. The first sense amplifier may be configured to perform a read/write operation in relation to a first memory cell connected to the first bit line using the first complementary bit line.

公开(公告)号：US12014769B2

公开(公告)日：2024-06-18

申请号：US17876046

申请日：2022-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Pil Lee ,  Hi Jung Kim ,  Kwang Sook Noh

IPC: G11C11/4091 ,  G11C11/4094 ,  G11C11/4096 ,  G11C11/4099

CPC classification number: G11C11/4091 ,  G11C11/4094 ,  G11C11/4096 ,  G11C11/4099

Abstract: A volatile memory device may include; a first sense amplifier, a second sense amplifier spaced apart from the first sense amplifier in a first direction, a first mat disposed between the first sense amplifier and the second sense amplifier and including a first bit line connected to the first sense amplifier and a second bit line connected to the second sense amplifier, a third sense amplifier spaced apart from the second sense amplifier in a second direction, a fourth sense amplifier spaced apart from the third sense amplifier in the first direction, and a second mat disposed between the third sense amplifier and the fourth sense amplifier and including a first complementary bit line connected to the first sense amplifier.