公开(公告)号：US20210035830A1

公开(公告)日：2021-02-04

申请号：US16821415

申请日：2020-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangnam KIM ,  Nohsung KWAK ,  Sungyeon KIM ,  Hyungjun KIM ,  Haejoong PARK ,  Jongwoo SUN ,  Sangrok OH ,  Ilyoung HAN ,  Jungpyo HONG

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/673 ,  H01L21/677

Abstract: A semiconductor manufacturing apparatus including at least one load module including a load port on which a substrate container is located, a plurality of substrates being mountable on the substrate container; at least one loadlock module including a loadlock chamber directly connected to the substrate container, the loadlock chamber interchangeably having atmospheric pressure and vacuum pressure, a first transfer robot within the loadlock chamber, and a substrate stage within the loadlock chamber, the plurality of substrates being mountable on the substrate stage; a transfer module including a transfer chamber connected to the loadlock chamber, a second transfer robot within the transfer chamber, and a substrate aligner within the transfer chamber; and at least one process module including at least one process chamber connected to the transfer module.

公开(公告)号：US20210027993A1

公开(公告)日：2021-01-28

申请号：US16905018

申请日：2020-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyeon KIM ,  Jungpyo HONG ,  Kwangnam KIM ,  Hyungjun KIM ,  Jongwoo SUN

IPC: H01J37/32 ,  H01L21/67

Abstract: A substrate treating apparatus, including a process chamber having a bottom portion configured to secure a substrate while a substrate treating process is performed on the substrate; and a dielectric window arranged at an upper portion of the process chamber to define a process space, and including: an insulative body, an antenna disposed on an upper surface of the insulative body, a protection layer disposed on a lower surface of the insulative body, and an etch resistor protruding from at least a portion of the protection layer toward the process space, wherein, based on power being applied to the antenna, a plasma is generated in the process space, and wherein the insulative body is protected from the plasma by the protection layer and the etch resistor.