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公开(公告)号:US20240019812A1
公开(公告)日:2024-01-18
申请号:US18360379
申请日:2023-07-27
发明人: Kyunghwan LEE , Kwangsoo HAN , Sangrok OH , Yonglim LEE , Jaejin LEE , Wookdam JUNG
CPC分类号: G04B19/283 , G04G21/00 , G04G99/006
摘要: An example wearable electronic device may include a main body including a first surface having an opening area formed therein, wherein a plurality of lateral walls, surrounding at least one part of the opening area, are formed in the peripheral area of the opening area; a display disposed inside the main body and which is viewable through the opening area; a wheel including a mounted part, which is at least partially mounted on the peripheral area, and an extension part which extends in the inward direction from the mounted part, wherein the wheel is formed in a ring shape extending in the circumferential direction with respect to a rotation axis of the wheel; and a guide member partially coming into contact with the main body and the wheel, respectively, and for guiding the rotation of the wheel. The guide member may include a first part having at least one portion thereof extending to a space between the plurality of lateral walls and a second part at least partially inserted to a first recess formed in each of the plurality of lateral walls.
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公开(公告)号:US20170032988A1
公开(公告)日:2017-02-02
申请号:US15163715
申请日:2016-05-25
发明人: Myoung Soo PARK , Yoshihisa HIRANO , Jongwoo SUN , Sangrok OH
IPC分类号: H01L21/67 , C23C16/50 , C23C16/455 , H01J37/32
CPC分类号: H01J37/3244 , H01J37/32009 , H01J2237/334
摘要: A plasma treatment apparatus including a chamber in which a plasma treatment process is to be performed; and a plasma protection layer on an inner surface of the chamber, wherein the inner surface of the chamber has a center-line average roughness of 0.5 μm or less.
摘要翻译: 一种等离子体处理装置,包括:要进行等离子体处理工艺的室; 以及在所述室的内表面上的等离子体保护层,其中所述室的内表面的中心线平均粗糙度为0.5μm以下。
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公开(公告)号:US20210035830A1
公开(公告)日:2021-02-04
申请号:US16821415
申请日:2020-03-17
发明人: Kwangnam KIM , Nohsung KWAK , Sungyeon KIM , Hyungjun KIM , Haejoong PARK , Jongwoo SUN , Sangrok OH , Ilyoung HAN , Jungpyo HONG
IPC分类号: H01L21/67 , H01L21/687 , H01L21/673 , H01L21/677
摘要: A semiconductor manufacturing apparatus including at least one load module including a load port on which a substrate container is located, a plurality of substrates being mountable on the substrate container; at least one loadlock module including a loadlock chamber directly connected to the substrate container, the loadlock chamber interchangeably having atmospheric pressure and vacuum pressure, a first transfer robot within the loadlock chamber, and a substrate stage within the loadlock chamber, the plurality of substrates being mountable on the substrate stage; a transfer module including a transfer chamber connected to the loadlock chamber, a second transfer robot within the transfer chamber, and a substrate aligner within the transfer chamber; and at least one process module including at least one process chamber connected to the transfer module.
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