公开(公告)号：US20240055395A1

公开(公告)日：2024-02-15

申请号：US18206201

申请日：2023-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Manho LEE ,  Jungmin SEO ,  Kwangseob SHIN ,  Woosin CHOI ,  Junghwan CHOI

IPC: H01L25/065 ,  H01L23/00 ,  H10B80/00

CPC classification number: H01L25/0652 ,  H01L24/49 ,  H10B80/00 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2224/49052 ,  H01L2224/49096

Abstract: A buffer chip is wire-bonded to memory dies. A semiconductor package includes a semiconductor die stack, a first set of wire bonds connected to a first set of semiconductor dies, a second set of wire bonds connected to a second set of semiconductor dies, and the buffer chip. The second set of semiconductor dies are on the first set of semiconductor dies. The buffer chip includes a first set of die bond pads being close to the semiconductor die stack, and a second set of die bond pads being distant from the semiconductor die stack. The second set of wire bonds extends to the first set of die bond pads of the buffer chip, and the first set of wire bonds extends to the second set of die bond pads of the buffer chip.

公开(公告)号：US20220068356A1

公开(公告)日：2022-03-03

申请号：US17223458

申请日：2021-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangseob SHIN ,  Jindo BYUN ,  Younghoon SON ,  Youngdon CHOI ,  Junghwan CHOI

IPC: G11C11/4091 ,  G11C11/4099 ,  G11C11/4076 ,  G11C11/4074 ,  G11C11/408

Abstract: A multi-level signal receiver includes a data sampler circuit and a reference voltage generator circuit. The data sampler includes (M−1) sense amplifiers which compare a multi-level signal having one of M voltage levels different from each other with (M−1) reference voltages. The data sampler generates a target data signal including N bits, M is an integer greater than two and N is an integer greater than one. The reference voltage generator generates the (M−1) reference voltages, At least two sense amplifiers of the (M−1) sense amplifiers have different sensing characteristics.