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公开(公告)号:US20190115325A1
公开(公告)日:2019-04-18
申请号:US15968143
申请日:2018-05-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yun Hyeok IM , Hee Seok LEE , Tae Woo KANG , Yeong Seok KIM , Kyoung-Min LEE
IPC: H01L25/10 , H01L23/367 , H01L23/538 , H01L23/498
Abstract: The semiconductor package including a first semiconductor package including a first semiconductor package substrate, and a first semiconductor chip on the first semiconductor package substrate, an interposer disposed on the first semiconductor package is provided. Interposer electrically connects the first semiconductor package with an external semiconductor package, and has first and second sides opposed to each other. The second side is located between the first side and the first semiconductor package substrate, a first recess is formed in the second side of the interposer. The first recess has side walls extended from the second side toward the first side of the interposer and an upper surface connected to the side walls and the upper surface of the first recess faces the first semiconductor chip and a via in the interposer. The via does not transmit an electrical signal between the first semiconductor package and the external semiconductor package.
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公开(公告)号:US20240371718A1
公开(公告)日:2024-11-07
申请号:US18507369
申请日:2023-11-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Daehan YOUN , Youngsang CHO , Kyoung-Min LEE , Junho HUH
IPC: H01L23/36 , H01L23/00 , H01L23/31 , H01L23/48 , H01L23/498 , H01L25/065
Abstract: A semiconductor package includes a first package substrate including a first redistribution layer, at least one semiconductor chip disposed on the first redistribution layer and including a semiconductor device, and a second package substrate disposed on the at least one semiconductor chip and including a second redistribution layer. The at least one semiconductor chip includes at least one heat dissipation via having one end adjacent to the semiconductor device and penetrating through at least a portion of the at least one semiconductor chip, and another end contacting the second package substrate. The at least one heat dissipation via is a dissipation path of heat generated from the semiconductor device.
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