公开(公告)号：US09397234B2

公开(公告)日：2016-07-19

申请号：US14695428

申请日：2015-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-min Choi ,  Ju-youn Kim ,  Hyun-jo Kim ,  Mu-kyeng Jung

IPC: H01L29/94 ,  H01L29/51 ,  H01L29/36 ,  H01L29/49 ,  H01L29/423

CPC classification number: H01L29/94 ,  H01L29/36 ,  H01L29/42312 ,  H01L29/4966 ,  H01L29/517

Abstract: A pumping capacitor is provided. The pumping capacitor includes a substrate, a P-type gate layer on the substrate, and a gate dielectric layer between the substrate and the P-type gate layer. The substrate includes an N-type well region and an N-type doping region in the N-type well region.

Abstract translation: 提供一个泵送电容器。 泵浦电容器包括衬底，衬底上的P型栅极层以及衬底和P型栅极层之间的栅极电介质层。 衬底包括N型阱区和N型阱区中的N型掺杂区。