-
公开(公告)号：US11158819B2
公开(公告)日：2021-10-26
申请号：US16726416
申请日：2019-12-24
IPC分类号： C07D487/22 , H01L51/00 , H01L27/30 , C07F7/22
摘要： Provided are a p-type organic semiconductor represented by Chemical Formula (1), which has improved thermal resistance and may detect near-infrared light, and a photoelectric conversion film, a photoelectric conversion device, and an image sensor including the same: In Chemical Formula (1), R1 and R2 are independently a substituted or unsubstituted C1 to C30 alkyl group, and R3 to R26 are independently a hydrogen atom, a deuterium atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted arylthio group, an oxy group substituted with a substituted or unsubstituted heterocyclic group, a thio group substituted with a substituted or unsubstituted heterocyclic group, or a substituted or unsubstituted amino group.
-
公开(公告)号：US11411192B2
公开(公告)日：2022-08-09
申请号：US16984510
申请日：2020-08-04
摘要： A device includes a first electrode and a second electrode, an active layer between the first electrode and the second electrode and a plurality of auxiliary layers between the first electrode and the active layer. The auxiliary layers include first and second auxiliary layers, the first auxiliary layer proximate to the active layer, the second auxiliary layer proximate to the second electrode. An energy level of the active layer, an energy level of the first auxiliary layer, an energy level of the second auxiliary layer, and a work function of the first electrode become deeper sequentially or shallower sequentially.
-
3.发明授权公开(公告)号：US11939422B2
公开(公告)日：2024-03-26
申请号：US17544028
申请日：2021-12-07
发明人： Masashi Tsuji , Fumiaki Kato , Naotoshi Suganuma , Takahiro Fujiyama , Yusaku Konishi , Dae Young Chung , Ha Il Kwon , Soonmin Cha , Tae Ho Kim
IPC分类号： C08G61/12 , B82Y20/00 , H10K50/11 , H10K50/115 , H10K50/15 , H10K71/00 , H10K71/12 , H10K85/10 , H10K101/30 , H10K101/40 , H10K102/00
CPC分类号： C08G61/124 , H10K71/12 , H10K85/111 , H10K85/151 , B82Y20/00 , C08G2261/12 , C08G2261/1434 , C08G2261/148 , C08G2261/149 , C08G2261/3241 , C08G2261/512 , C08G2261/5222 , H10K50/11 , H10K50/115 , H10K50/15 , H10K71/00 , H10K2101/30 , H10K2101/40 , H10K2102/00
摘要： A copolymer including a structural unit represented by Chemical Formula 1
wherein the copolymer is capable of improving luminous efficiency and durability, particularly, an improvement in luminescence life-span, of an electroluminescence device, particularly a quantum dot electroluminescence device.-
4.发明申请公开(公告)号：US20200212317A1
公开(公告)日：2020-07-02
申请号：US16726416
申请日：2019-12-24
摘要： Provided are a p-type organic semiconductor represented by Chemical Formula (1), which has improved thermal resistance and may detect near-infrared light, and a photoelectric conversion film, a photoelectric conversion device, and an image sensor including the same: In Chemical Formula (1), R1 and R2 are independently a substituted or unsubstituted C1 to C30 alkyl group, and R3 to R26 are independently a hydrogen atom, a deuterium atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted arylthio group, an oxy group substituted with a substituted or unsubstituted heterocyclic group, a thio group substituted with a substituted or unsubstituted heterocyclic group, or a substituted or unsubstituted amino group.
-
-
-
搜索结果
4 条记录 (耗时 0.012 秒)
