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公开(公告)号：US11793007B2
公开(公告)日：2023-10-17
申请号：US17089181
申请日：2020-11-04
发明人： Jisoo Shin , Kyung Bae Park , Sung Jun Park , Jeong Il Park , Seon-Jeong Lim , Youn Hee Lim , Yeong Suk Choi , Taejin Choi
CPC分类号： H10K30/30 , H10K30/82 , H10K39/32 , H10K85/211 , H10K85/40 , H10K85/636 , H10K85/654 , H10K85/655 , H10K85/656 , H10K85/6572 , H10K85/6576
摘要： A photoelectric conversion device includes a first electrode and a second electrode and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes a first material and a second material, the first material and the second material being configured to form a pn junction, and a third material different from the first material and the second material. The third material includes an electron withdrawing group.
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公开(公告)号：US11616092B2
公开(公告)日：2023-03-28
申请号：US17097329
申请日：2020-11-13
发明人： Kyung Bae Park , Yong Wan Jin , Sung Young Yun , Sung Jun Park , Feifei Fang , Chui Joon Heo
IPC分类号： H01L27/146 , H01L31/0352
摘要： An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.
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公开(公告)号：US11563186B2
公开(公告)日：2023-01-24
申请号：US16887405
申请日：2020-05-29
发明人： Seok-Hwan Hong , Sung Jun Park , Kyung Bae Park , Sung Young Yun , Chul Joon Heo
摘要： A photoelectric device includes a first electrode, a second electrode, a photoelectric conversion layer between the first electrode and the second electrode, and a charge transport layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer is configured to absorb light in a wavelength spectrum and converting the absorbed light into an electrical signal. The charge transport layer includes a first charge transport material and a second charge transport material which collectively define a heterojunction.
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公开(公告)号：US11557741B2
公开(公告)日：2023-01-17
申请号：US16519448
申请日：2019-07-23
发明人： Chul Joon Heo , Kyung Bae Park , Hyun Bum Kang , Sung Jun Park , Jeong Il Park , Chul Baik , Ji Soo Shin , Sung Young Yun , Gae Hwang Lee , Don-Wook Lee , Eun Kyung Lee , Yong Wan Jin , Yeong Suk Choi , Taejin Choi
摘要： A photoelectric conversion device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and configured to absorb light in at least one part of a wavelength spectrum of light and to convert it into an electric signal, and an organic auxiliary layer between the first electrode and the photoelectric conversion layer and having a higher charge mobility than a charge mobility of the photoelectric conversion layer. An organic sensor may include the photoelectric conversion device. An electronic device may include the organic sensor.
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公开(公告)号：US11552212B2
公开(公告)日：2023-01-10
申请号：US17306271
申请日：2021-05-03
发明人： Kyung Bae Park , Sung Jun Park , Feifei Fang , Sung Young Yun , Seon-Jeong Lim , Chul Joon Heo
IPC分类号： H01L31/112 , H01L31/0224 , H01L31/0256
摘要： A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.
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公开(公告)号：US11038068B2
公开(公告)日：2021-06-15
申请号：US16512525
申请日：2019-07-16
发明人： Sung Young Yun , Kyung Bae Park , Sung Jun Park , Gae Hwang Lee , Yong Wan Jin , Chul Joon Heo
IPC分类号： H01L31/0224 , H01L27/146 , H01L51/44 , H01L27/30
摘要： A photoelectric conversion device may include one or more pixel electrodes and an opposed electrode and a photoelectric conversion layer between the one or more pixel electrodes and the opposed electrode. The photoelectric conversion layer may be configured to absorb light of at least one part in a wavelength spectrum and to convert the absorbed light into an electrical signal. Each pixel electrode has an upper surface facing the photoelectric conversion layer, a side surface, and a non-angulated edge where the upper surface and the side surface meet.
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公开(公告)号：US11855236B2
公开(公告)日：2023-12-26
申请号：US18151770
申请日：2023-01-09
发明人： Kyung Bae Park , Sung Jun Park , Feifei Fang , Sung Young Yun , Seon-Jeong Lim , Chul Joon Heo
IPC分类号： H01L31/112 , H01L31/0224 , H01L31/0256
CPC分类号： H01L31/1121 , H01L31/0256 , H01L31/022408
摘要： A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.
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公开(公告)号：US11631819B2
公开(公告)日：2023-04-18
申请号：US17157044
申请日：2021-01-25
发明人： Kyung Bae Park , Sung Jun Park , Feifei Fang , Sung Young Yun , Seon-Jeong Lim , Youn Hee Lim , Chul Joon Heo
摘要： Disclosed are a photoelectric conversion device and an organic sensor and an electronic device including the same. The photoelectric conversion device includes a first and a second electrode, a photoelectric conversion layer between the first and the second electrode and configured to absorb light in at least one portion of a wavelength spectrum and to convert the absorbed light into an electric signal, and a buffer layer between the second electrode and the photoelectric conversion layer and including a mixture of at least two materials. The mixture includes a first and a second material. The first material has an energy bandgap of at least about 3.2 eV and a HOMO energy level of at least about 6.0 eV. The second material has an energy bandgap of less than or equal to about 2.8 eV and a HOMO energy level of at least about 6.0 eV.
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公开(公告)号：US11495761B2
公开(公告)日：2022-11-08
申请号：US16815481
申请日：2020-03-11
发明人： Chui Joon Heo , Kyung Bae Park , Sung Jun Park , Sung Young Yun , Gae Hwang Lee , Chui Baik , Ji Soo Shin , Yong Wan Jin , Hye Rim Hong
摘要： A photoelectric conversion device includes a first electrode and a second electrode facing each other, an organic photoelectric conversion layer between the first electrode and the second electrode, and a charge auxiliary layer between the first electrode and the organic photoelectric conversion layer. The organic photoelectric conversion layer is configured to absorb light in at least a portion of a wavelength spectrum of incident light and to convert the absorbed light into an electrical signal. The charge auxiliary layer includes a metal and an oxide. The oxide may be an oxide material that excludes silicon oxide such that the charge auxiliary layer does not include silicon oxide.
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公开(公告)号：US11151349B2
公开(公告)日：2021-10-19
申请号：US16729993
申请日：2019-12-30
发明人： Gae Hwang Lee , Kyung Bae Park , Sung Jun Park , Sung Young Yun , Yong Wan Jin , Chul Joon Heo
摘要： A fingerprint sensor may include first and second electrodes, a light absorption layer isolated from direct contact with the first and second electrodes, and an insulation layer between the first electrode and the light absorption layer and further between the second electrode and the light absorption layer. A reflective layer may be between the light absorption layer and the first electrode. The insulation layer may include a first insulation layer between the first electrode and the light absorption layer, and a second insulation layer between the second electrode and the light absorption layer. A fingerprint sensor array including a plurality of fingerprint sensors may at least partially expose a plurality of sub-pixels of a display panel on which the fingerprint sensor array is located.
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