公开(公告)号：US10529919B2

公开(公告)日：2020-01-07

申请号：US16044666

申请日：2018-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-Na Cho ,  Hye-Ji Yoon ,  O-Ik Kwon

IPC: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

Abstract: A method of manufacturing an MRAM device including forming a first insulating interlayer and a lower electrode contact, the lower electrode contact extending through the first insulating interlayer; forming a lower electrode layer, a magnetic tunnel junction layer, an upper electrode layer, and a first hard mask layer on the first insulating interlayer and lower electrode contact; forming a second hard mask on the first hard mask layer; etching the first hard mask layer and upper electrode layer to form a first hard mask and upper electrode; forming a spacer on sidewalls of the upper electrode and hard masks; and etching the magnetic tunnel junction layer and the lower electrode layer to form a structure including a lower electrode and a magnetic tunnel junction pattern on the lower electrode contact, wherein a layer remains on the upper electrode after etching the magnetic tunnel junction layer and the lower electrode layer.