公开(公告)号：US09859848B2

公开(公告)日：2018-01-02

申请号：US14996248

申请日：2016-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyo-Soo Choo ,  Pil-Seon Yoo ,  Duk-Min Kwon ,  Chung-Ho Yu

IPC: G05F1/46 ,  H03F1/30 ,  G05F1/563 ,  G11C5/14 ,  G11C7/04 ,  G11C16/30 ,  G05F1/567 ,  G05F3/24 ,  G05F1/56

CPC classification number: H03F1/301 ,  G05F1/463 ,  G05F1/56 ,  G05F1/563 ,  G05F1/567 ,  G05F3/245 ,  G11C5/147 ,  G11C7/04 ,  G11C16/30 ,  H03F2200/447 ,  H03F2200/468

Abstract: A variable voltage generation circuit includes a first amplification circuit and a second amplification circuit. The first amplification circuit generates a first output voltage based on a reference voltage, a first feedback voltage, a temperature-varied voltage and a temperature-fixed voltage such that the first output voltage is varied in a first voltage range according to a variation of the operational temperature. The first amplification circuit generates the first feedback voltage based on the first output voltage. The second amplification circuit generates a second output voltage based on the first feedback voltage, a second feedback voltage, the temperature-varied voltage and the temperature-fixed voltage such that the second output voltage is varied in a second voltage range wider than the first voltage range according to the variation of the operational temperature. The second amplification circuit generates the second feedback voltage based on the second output voltage.