公开(公告)号：US10043873B2

公开(公告)日：2018-08-07

申请号：US15060174

申请日：2016-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung Hwan Yeo ,  Seonguk Park ,  Seungjae Lee ,  Doyoung Choi ,  Sunhom Steve Paak ,  Tae Eung Yoon ,  Dongho Cha ,  Ruiyi Chen

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/40 ,  H01L29/66 ,  H01L27/11 ,  H01L29/417 ,  H01L29/78

Abstract: Provided is a semiconductor device with a field effect transistor. The semiconductor device includes a substrate, an active pattern on the substrate, a gate electrode crossing the active pattern and a capping structure on the gate electrode. The capping structure includes first and second capping patterns that are sequentially stacked on the gate electrode. The second capping pattern completely covers a top surface of the first capping pattern, and a dielectric constant of the second capping pattern is greater than that of the first capping pattern.