公开(公告)号：US20230111579A1

公开(公告)日：2023-04-13

申请号：US17815187

申请日：2022-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： RYONG HA ,  SEOKHOON KIM ,  DOHYUN GO ,  JUNGTAEK KIM ,  MOON SEUNG YANG ,  SANGIL LEE ,  SEOJIN JEONG

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/775 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/417 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/40

Abstract: A semiconductor device includes a substrate that includes an active pattern, a channel pattern disposed on the active pattern, where the channel pattern includes a plurality of semiconductor patterns that are vertically stacked and spaced apart from each other, a source/drain pattern connected to the semiconductor patterns, and a gate electrode disposed on the semiconductor patterns. The gate electrode includes a plurality of portions that are respectively interposed between the semiconductor patterns, and the source/drain pattern includes a buffer layer in contact with the semiconductor patterns and a main layer disposed on the buffer layer. The buffer layer contains silicon germanium (SiGe) and includes a first semiconductor layer and a first reflow layer thereon. A germanium concentration of the first reflow layer is less than that of the first semiconductor layer.