公开(公告)号：US20210099656A1

公开(公告)日：2021-04-01

申请号：US16999586

申请日：2020-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SOONIK CHO ,  MINJI HWANG ,  SEUNGJIN LEE

IPC: H04N5/341 ,  H04N5/374

Abstract: An image sensor and an operation method of the image sensor are disclosed. The image sensor includes a pixel array and a row driver. The pixel array includes a first pixel and a second pixel. Each of the first pixel and the second pixel includes at least one photosensitive element and a switching element configured to transfer charges generated by the at least one photosensitive element to a floating diffusion node. The first pixel and the second pixel are connected to a same column line. The row driver is configured to provide a clamping control signal to the switching element in the first pixel. The clamping control signal transits from a first level to a second level that is less than the first level, during a read period of the second pixel.

公开(公告)号：US20170257582A1

公开(公告)日：2017-09-07

申请号：US15434605

申请日：2017-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： YUNHWAN JUNG ,  SUNYOOL KANG ,  KYOUNGMIN KOH ,  SEUNGJIN LEE

IPC: H04N5/357 ,  H04N5/374 ,  H04N5/378

CPC classification number: H04N5/3577 ,  H04N5/374 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor includes first pixels and second pixels arranged in alternating order along a first direction, first output lines extending in a second direction that is perpendicular to the first direction and respectively connected to the first pixels, second output lines extending in the second direction and respectively connected to the second pixels, first analog circuit blocks and second analog circuit blocks arranged in alternating order along the first direction, and shielding structures disposed each between adjacent ones of the first and second analog circuit blocks. Each of the first analog circuit blocks includes a plurality of first analog circuits respectively connected to the first output lines. Each of the second analog circuit blocks includes a plurality of second analog circuits respectively connected to the second output lines.

公开(公告)号：US20220299315A1

公开(公告)日：2022-09-22

申请号：US17463499

申请日：2021-08-31

Applicant: Samsung Electronics Co., Ltd. ,  Seoul National University R&DB Foundation

Inventor： JOOHO KIM ,  DONYUN KIM ,  YUNHYOUNG NAM ,  SEUNGJIN LEE ,  DAWOON CHOI

IPC: G01B11/24 ,  H01J37/28 ,  G06K9/34 ,  G06T7/60

Abstract: A method of measuring a critical dimension (CD) includes forming a plurality of patterns in a substrate, creating first to n-th images, where n is a natural number greater than 1, for first to n-th areas in the substrate, respectively, where the first to n-th areas do not overlap with each other, where each of the first to n-th areas comprising at least some of the plurality of patterns, creating a merged image for the first to n-th images, and measuring a CD for a measurement object from the plurality of patterns using the merged image. The merged image has a higher resolution than each of the first to n-th images.

公开(公告)号：US20220207227A1

公开(公告)日：2022-06-30

申请号：US17486794

申请日：2021-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNGJIN LEE ,  Yunkyoung Song ,  Dawoon Choi ,  Kyoil Koo

IPC: G06F30/392 ,  H01L21/308 ,  G03F7/20

Abstract: A method for detecting a stochastic weak point of a layout pattern of a semiconductor integrated circuit includes: forming a semiconductor integrated circuit by exposing a wafer which is masked by a layout pattern and coated with a photoresist to light, and etching the circuit according to the layout pattern, calculating line edge roughness (LER) of the circuit, and calculating a variability constant for fitting the line edge roughness to a normal distribution from a polymer concentration value of the photoresist. The polymer concentration value is calculated from modeling the layout pattern, a total value of intensity of light reaching the photoresist, and an intensity value of light reaching one point of the photoresist. The method further includes calculating a probability distribution of the polymer concentration value of the layout pattern based on the variability constant, and calculating a stochastic weak point of the layout pattern from the probability distribution.