公开(公告)号：US20220207227A1

公开(公告)日：2022-06-30

申请号：US17486794

申请日：2021-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNGJIN LEE ,  Yunkyoung Song ,  Dawoon Choi ,  Kyoil Koo

IPC: G06F30/392 ,  H01L21/308 ,  G03F7/20

Abstract: A method for detecting a stochastic weak point of a layout pattern of a semiconductor integrated circuit includes: forming a semiconductor integrated circuit by exposing a wafer which is masked by a layout pattern and coated with a photoresist to light, and etching the circuit according to the layout pattern, calculating line edge roughness (LER) of the circuit, and calculating a variability constant for fitting the line edge roughness to a normal distribution from a polymer concentration value of the photoresist. The polymer concentration value is calculated from modeling the layout pattern, a total value of intensity of light reaching the photoresist, and an intensity value of light reaching one point of the photoresist. The method further includes calculating a probability distribution of the polymer concentration value of the layout pattern based on the variability constant, and calculating a stochastic weak point of the layout pattern from the probability distribution.

公开(公告)号：US11977828B2

公开(公告)日：2024-05-07

申请号：US17486794

申请日：2021-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungjin Lee ,  Yunkyoung Song ,  Dawoon Choi ,  Kyoil Koo

IPC: G06F30/392 ,  G03F7/00 ,  H01L21/308 ,  G06F111/08 ,  G06F111/10

CPC classification number: G06F30/392 ,  G03F7/70033 ,  G03F7/70625 ,  G03F7/7065 ,  H01L21/308 ,  G06F2111/08 ,  G06F2111/10

Abstract: A method for detecting a stochastic weak point of a layout pattern of a semiconductor integrated circuit includes: forming a semiconductor integrated circuit by exposing a wafer which is masked by a layout pattern and coated with a photoresist to light, and etching the circuit according to the layout pattern, calculating line edge roughness (LER) of the circuit, and calculating a variability constant for fitting the line edge roughness to a normal distribution from a polymer concentration value of the photoresist. The polymer concentration value is calculated from modeling the layout pattern, a total value of intensity of light reaching the photoresist, and an intensity value of light reaching one point of the photoresist. The method further includes calculating a probability distribution of the polymer concentration value of the layout pattern based on the variability constant, and calculating a stochastic weak point of the layout pattern from the probability distribution.