公开(公告)号：US20240038536A1

公开(公告)日：2024-02-01

申请号：US18319850

申请日：2023-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YONGIN LEE ,  DONGGAP SHIN ,  WOOYOUNG KIM ,  BUMKI MOON ,  JIWON MOON ,  INHWA BAEK ,  SEUNGDAE SEOK ,  SIWOONG WOO ,  SEHOON JANG

IPC: H01L21/18 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/187 ,  H01L21/02076 ,  H01L21/67167

Abstract: A plasma processing apparatus includes a load lock chamber switchable between an atmospheric pressure state and a vacuum pressure state, and a substrate processing apparatus configured to transfer a substrate to and from the load lock chamber and to perform a plasma process on a surface of the substrate in a plasma chamber under a vacuum atmosphere. The substrate processing apparatus includes a substrate stage disposed within the plasma chamber and configured to support the substrate, a plasma gas supply configured to supply a plasma gas into the plasma chamber, a steam supply configured to supply a water vapor into the plasma chamber, and a plasma generator configured to generate a plasma in the plasma chamber.