公开(公告)号：US20250132218A1

公开(公告)日：2025-04-24

申请号：US18623488

申请日：2024-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYUNG DON MUN ,  WOOYOUNG KIM ,  YEONHO JANG ,  HYEONJEONG HWANG

IPC: H01L23/367 ,  H01L23/00 ,  H01L23/31 ,  H01L23/373 ,  H01L25/00 ,  H01L25/18

Abstract: A semiconductor package includes: a first substrate; a first semiconductor chip; a second semiconductor chip being spaced apart, in a first direction, from the first substrate, the first direction being parallel to a top surface of the first substrate; at least one thermal radiation structure on the first substrate and between the first semiconductor chip and the second semiconductor chip; and a third semiconductor chip on the first semiconductor chip, the second semiconductor chip, and the at least one thermal radiation structure, wherein the at least one thermal radiation structure includes: a thermal radiation post; and a thermal conductive pattern on the thermal radiation post, wherein a bottom surface of the third semiconductor chip is in contact with the thermal conductive pattern, and wherein the top surface of the first substrate is in contact with the thermal radiation post.

公开(公告)号：US20240038536A1

公开(公告)日：2024-02-01

申请号：US18319850

申请日：2023-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YONGIN LEE ,  DONGGAP SHIN ,  WOOYOUNG KIM ,  BUMKI MOON ,  JIWON MOON ,  INHWA BAEK ,  SEUNGDAE SEOK ,  SIWOONG WOO ,  SEHOON JANG

IPC: H01L21/18 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/187 ,  H01L21/02076 ,  H01L21/67167

Abstract: A plasma processing apparatus includes a load lock chamber switchable between an atmospheric pressure state and a vacuum pressure state, and a substrate processing apparatus configured to transfer a substrate to and from the load lock chamber and to perform a plasma process on a surface of the substrate in a plasma chamber under a vacuum atmosphere. The substrate processing apparatus includes a substrate stage disposed within the plasma chamber and configured to support the substrate, a plasma gas supply configured to supply a plasma gas into the plasma chamber, a steam supply configured to supply a water vapor into the plasma chamber, and a plasma generator configured to generate a plasma in the plasma chamber.