-
公开(公告)号：US20240188293A1
公开(公告)日：2024-06-06
申请号：US18229296
申请日：2023-08-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sam Ki KIM , Nam Bin KIM , Ji Woong KIM , Tae Hun KIM , Ki Bong MOON , Sae Rom LEE , Sung-Bok LEE , Jun Hee LIM , Nag Yong CHOI , Sun Gyung HWANG
Abstract: A semiconductor memory device including a substrate; a mold structure including gate electrodes and mold insulating layers stacked in a stair shape, channel structures on the substrate, intersecting the gate electrodes, and passing through the mold structure; cell contacts connected to the gate electrodes; a first interlayer insulating layer on the mold structure and covering the channel structures and cell contacts; first metal patterns connected to the channel structures, an upper surface of the first metal patterns being coplanar with an upper surface of the first interlayer insulating layer; second metal patterns connected to the cell contacts, an upper surface of the second metal patterns being coplanar with the upper surface of the first metal patterns; a first blocking layer along the upper surface of the first interlayer insulating layer, the first metal patterns, and the second metal patterns; and a first dummy vias passing through the first blocking layer.
-
公开(公告)号：US20240188294A1
公开(公告)日：2024-06-06
申请号：US18232948
申请日：2023-08-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sam Ki KIM , Nam Bin KIM , Ji Woong KIM , Tae Hun KIM , Sae Rom LEE , Jun Hee LIM , Nag Yong CHOI , Sun Gyung HWANG
Abstract: A semiconductor memory device comprising a substrate including a cell array area and an extension area, a mold structure including, a plurality of gate electrodes sequentially stacked on the cell array area of the substrate and stacked in a stair shape on the extension area of the substrate, and a plurality of mold insulating films stacked alternately with the plurality of gate electrodes, a plurality of channel structures on the cell array area of the substrate, wherein each of the plurality of channel structures extends through the mold structure and intersects the plurality of gate electrodes, a plurality of cell contacts on the extension area of the substrate and respectively connected to the plurality of gate electrodes, a first interlayer insulating film on the mold structure so as to cover the plurality of channel structures and the plurality of cell contacts.
-
公开(公告)号：US20170052623A1
公开(公告)日：2017-02-23
申请号：US15239321
申请日：2016-08-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seong Woong PARK , Byung Jin KANG , Nam Hoi KIM , Do Hyung LEE , Sae Rom LEE
CPC classification number: G09G5/003 , G06F1/1626 , G06F1/1652 , G06F1/1684 , G06F3/016 , G06F3/04847 , G06F3/04886 , G06F3/147 , G06F2203/0339 , G06F2203/04105 , G09G2330/027 , G09G2354/00
Abstract: An electronic device is provided. The electronic device includes a sensor module configured to sense a pressure applied to the electronic device and to send a pressure value corresponding to the sensed pressure to a processor and the processor configured to perform an operation corresponding to the pressure value received from the sensor module, wherein if the sensed pressure belongs to a first interval, the sensor module sends a first pressure value, which represents the first interval, to the processor, wherein if the sensed pressure belongs to a second interval higher than the first interval, the sensor module sends a second pressure value corresponding to the sensed pressure to the processor, and wherein if the sensed pressure belongs to a third interval higher than the second interval, the sensor module sends a third pressure value, which represents the third interval, to the processor.
Abstract translation: 提供电子设备。 电子设备包括传感器模块，该传感器模块被配置为感测施加到电子设备的压力并且将与感测到的压力相对应的压力值发送到处理器，并且处理器被配置为执行与从传感器模块接收的压力值相对应的操作， 其中如果感测到的压力属于第一间隔，则传感器模块将表示第一间隔的第一压力值发送到处理器，其中如果感测到的压力属于高于第一间隔的第二间隔，则传感器模块发送 第二压力值对应于感测到的对处理器的压力，并且其中如果感测到的压力属于高于第二间隔的第三间隔，则传感器模块将表示第三间隔的第三压力值发送到处理器。
-
-
Search Results
3
records
(took 0.015 seconds)
