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公开(公告)号：US20190129655A1
公开(公告)日：2019-05-02
申请号：US16023706
申请日：2018-06-29
发明人： Raeyoung LEE , Hyunjung KIM , Sung-Bok LEE , Soyeong GWAK , Sang-wan NAM
摘要： A method of operating a memory controller, the memory controller configured to control a nonvolatile memory device, the nonvolatile memory device including a plurality of memory blocks. The method including detecting an invalid block among the plurality of memory blocks; determining an invalid pattern based on a state of the invalid block; and performing an operation on the invalid block such that the invalid block has the invalid pattern.
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公开(公告)号：US20240188293A1
公开(公告)日：2024-06-06
申请号：US18229296
申请日：2023-08-02
发明人： Sam Ki KIM , Nam Bin KIM , Ji Woong KIM , Tae Hun KIM , Ki Bong MOON , Sae Rom LEE , Sung-Bok LEE , Jun Hee LIM , Nag Yong CHOI , Sun Gyung HWANG
摘要： A semiconductor memory device including a substrate; a mold structure including gate electrodes and mold insulating layers stacked in a stair shape, channel structures on the substrate, intersecting the gate electrodes, and passing through the mold structure; cell contacts connected to the gate electrodes; a first interlayer insulating layer on the mold structure and covering the channel structures and cell contacts; first metal patterns connected to the channel structures, an upper surface of the first metal patterns being coplanar with an upper surface of the first interlayer insulating layer; second metal patterns connected to the cell contacts, an upper surface of the second metal patterns being coplanar with the upper surface of the first metal patterns; a first blocking layer along the upper surface of the first interlayer insulating layer, the first metal patterns, and the second metal patterns; and a first dummy vias passing through the first blocking layer.
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