公开(公告)号：US20220155971A1

公开(公告)日：2022-05-19

申请号：US17393643

申请日：2021-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunkyo OH ,  Sanghyun CHOI ,  Kangho ROH

IPC: G06F3/06

Abstract: A method of measuring durability of a nonvolatile memory device that includes a plurality of memory blocks, the method including: periodically receiving a read command for a first memory block among the plurality of memory blocks; periodically performing a read operation on the first memory block based on the read command; periodically outputting at least one cell count value associated with the first memory block based on a result of the read operation; and periodically storing durability information associated with the first memory block in response to a periodic reception of the durability information, the durability information being obtained by accumulating the at least one cell count value.

公开(公告)号：US20200151539A1

公开(公告)日：2020-05-14

申请号：US16448636

申请日：2019-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo Oh ,  Youngdeok SEO ,  Jinbaek SONG ,  Sanghyun CHOI

IPC: G06N3/04 ,  G11C16/04 ,  G11C16/26 ,  G06N5/04

Abstract: A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory that stores a plurality of on-cell counts, which are generated by reading memory cells connected to a plurality of reference word lines of the plurality of blocks by using a read level, and an artificial neural network model, and a controller that inputs an on-cell count corresponding to a target block among the plurality of on-cell counts and a number of a target word line of the target block to the artificial neural network model, and infers a plurality of read levels for reading data of memory cells connected to the target word line using the artificial neural network model.

公开(公告)号：US20230054286A1

公开(公告)日：2023-02-23

申请号：US17848820

申请日：2022-06-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunkyo OH ,  Sanghyun CHOI ,  Heewon LEE

IPC: G06F3/06

Abstract: Provided are a storage system including a host and a storage device, and an operation method of the storage system. The storage device includes a memory controller and a memory device, where an operation method of the memory controller includes receiving from the host a first mode change request for a folder, which is a unit for managing at least one file, and a logical address of the at least one file, and in response to the first mode change request, rewriting to the memory device first data corresponding to the logical address in a second operating mode, and invalidating first data which is existing data already written to correspond to the logical address and the first data in a first operating mode, wherein the first mode change request sets a data operation speed to a high-speed mode for the at least one file included in the folder.

公开(公告)号：US20240397707A1

公开(公告)日：2024-11-28

申请号：US18381785

申请日：2023-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangkyu SUN ,  Goro CHOI ,  Hyo-Sub KIM ,  Junhyeok AHN ,  Eunkyung CHA ,  Dongmin CHOI ,  Sanghyun CHOI

IPC: H10B12/00 ,  H01L29/423

Abstract: A semiconductor memory device includes a substrate having a cell array area and a core area near the cell array area, the cell array area including a direct contact hole exposing an active region, a buried contact in the cell array area, the buried contact being connected to a storage element, a direct contact in the cell array area, the direct contact including an upper layer and a lower layer, the upper layer including a metal, and the lower layer being in the direct contact hole in direct contact with the active region and including a silicide of the metal, bit lines in contact with the upper layer of the direct contact, and word lines crossing the bit lines.

公开(公告)号：US20220326884A1

公开(公告)日：2022-10-13

申请号：US17518770

申请日：2021-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun KANG ,  Hyuna KIM ,  Minkyu KIM ,  Donghoo LIM ,  Sanghyun CHOI

IPC: G06F3/06 ,  G06F13/28 ,  G11C16/04 ,  G11C16/26 ,  G11C16/14 ,  G06F11/10

Abstract: A storage controller communicates with a non-volatile memory device, and an operation method of the storage controller includes determining whether a first read voltage is registered at a history table, when it is determined that the first read voltage is registered at the history table, performing a first direct memory access (DMA) read operation on data stored in the non-volatile memory device, based on the first read voltage, obtaining a page count value, based on the first DMA read operation, determining a second read voltage different from the first read voltage based on a difference between the page count value and an idle count value, without an additional read operation for the data stored in the non-volatile memory device, and updating the first read voltage of the history table based on the second read voltage.