公开(公告)号：US11869599B2

公开(公告)日：2024-01-09

申请号：US18064635

申请日：2022-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungmin Park ,  Kyunghoon Sung ,  Ilhan Park ,  Jisang Lee ,  Joon Suc Jang ,  Sanghyun Joo

IPC: G11C16/04 ,  G11C16/24 ,  G11C16/10 ,  H01L25/065 ,  H01L23/00 ,  H01L25/18

CPC classification number: G11C16/24 ,  G11C16/0483 ,  G11C16/10 ,  H01L24/00 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/08145 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A nonvolatile memory device includes cell strings commonly connected between bitlines and a source line where the cell strings are grouped into memory blocks. During a precharge period, channels of the cell strings of a selected memory block are precharged by applying a gate induced drain leakage (GIDL) on voltage to gates of GIDL transistors included in the cell strings of the selected memory block where the GIDL on voltage has a voltage level to induce GIDL. During the precharge period, precharge of channels of the cell strings of an unselected memory block are prevented by controlling a gate voltage of GIDL transistors included in the cell strings of the unselected memory block to prevent the GIDL. During a program execution period after the precharge period, memory cells of the selected memory block connected to a selected wordline are programmed by applying a program voltage to the selected wordline.

公开(公告)号：US11527293B2

公开(公告)日：2022-12-13

申请号：US17341837

申请日：2021-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungmin Park ,  Kyunghoon Sung ,  Ilhan Park ,  Jisang Lee ,  Joon Suc Jang ,  Sanghyun Joo

IPC: G11C16/04 ,  G11C16/24 ,  G11C16/10 ,  H01L25/065 ,  H01L23/00 ,  H01L25/18

Abstract: A nonvolatile memory device includes cell strings commonly connected between bitlines and a source line where the cell strings are grouped into memory blocks. During a precharge period, channels of the cell strings of a selected memory block are precharged by applying a gate induced drain leakage (GIDL) on voltage to gates of GIDL transistors included in the cell strings of the selected memory block where the GIDL on voltage has a voltage level to induce GIDL. During the precharge period, precharge of channels of the cell strings of an unselected memory block are prevented by controlling a gate voltage of GIDL transistors included in the cell strings of the unselected memory block to prevent the GIDL. During a program execution period after the precharge period, memory cells of the selected memory block connected to a selected wordline are programmed by applying a program voltage to the selected wordline.