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公开(公告)号：US12029027B2
公开(公告)日：2024-07-02
申请号：US18205715
申请日：2023-06-05
发明人： Cheoljin Cho , Jaesoon Lim , Jaehyoung Choi , Jungmin Park
摘要： A capacitor and a DRAM device, the capacitor including a lower electrode; a dielectric layer structure on the lower electrode, the dielectric layer structure including a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer sequentially stacked; and an upper electrode on the dielectric layer structure, wherein the hafnium oxide layer has a tetragonal crystal phase or an orthorhombic crystal phase.
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2.发明公开公开(公告)号：US20240121841A1
公开(公告)日：2024-04-11
申请号：US18545598
申请日：2023-12-19
发明人： Kunil YUM , Yangsoo Kwon , Jungmin Park , Junho Lee
CPC分类号： H04W76/14 , H04B7/01 , H04B7/0626 , H04L1/0003 , H04W24/10 , H04W72/51
摘要： A method of performing device-to-device (D2D) communication by a first device includes obtaining at least one measurement value corresponding to a relative velocity between the first device and a second device; adjusting at least one transmission parameter based on the at least one measurement value; providing the adjusted at least one transmission parameter to the second device; and transmitting data to the second device based on the adjusted at least one transmission parameter.
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公开(公告)号：US20240008254A1
公开(公告)日：2024-01-04
申请号：US18116071
申请日：2023-03-01
发明人： Jungmin Park , Hanjin Lim , Hyungsuk Jung
IPC分类号： H10B12/00
CPC分类号： H10B12/315 , H10B12/033
摘要： A semiconductor device includes a substrate, a lower electrode above the substrate, the lower electrode extending in a vertical direction, a support surrounding a side wall of the lower electrode and supporting the lower electrode, a dielectric layer on the lower electrode and the support, and an upper electrode on the dielectric layer, wherein the lower electrode includes a base electrode layer and an insertion layer, the base electrode layer containing a halogen element, and the insertion layer containing carbon, and the insertion layer is inserted in a portion of the lower electrode, the portion of the lower electrode being adjacent to the support and the dielectric layer.
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公开(公告)号：US11863475B2
公开(公告)日：2024-01-02
申请号：US16999835
申请日：2020-08-21
发明人： Jung Hyun Bae , Jungmin Park
IPC分类号： H04L5/00 , H04W72/1273 , H04L1/00
CPC分类号： H04L5/0048 , H04L1/0002 , H04W72/1273 , H04L1/0067
摘要： An apparatus and method are provided for partial transmission of a PDSCH DMRS due to PDSCH RM. The method includes determining, by the UE, whether a downlink received from a base station is rate matched; and in response to determining that the downlink is rate-matched, determining, by the UE, that a rate matching pattern of the downlink is applicable for partial transmission of a reference signal, and decoding, by the UE, the downlink with a partial transmission of the reference signal.
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公开(公告)号：US11658402B2
公开(公告)日：2023-05-23
申请号：US16607953
申请日：2018-04-25
发明人： Hyunjin Kim , Byungchul Kim , Jungmin Park , Kwanghyun Baek , Youngju Lee , Jungyub Lee , Sungchul Park
CPC分类号： H01Q1/38 , H01Q1/24 , H05K1/0243 , H05K1/0277 , H05K5/0017 , H05K5/0086 , H05K7/1427 , H05K9/0024
摘要： Disclosed is an electronic device having a space formed between front and rear surfaces thereof, the electronic device comprising: a first cover arranged on the front surface; a second cover arranged on the rear surface; a frame surrounding the first cover and the second cover; and a multilayered circuit board coupled to the second cover so as to constitute the housing of the electronic device, wherein the multilayered circuit board may comprises an insulated metal layer having a surface coupled to the second cover and a substrate-structured antenna device having a surface coupled to the insulated metal layer.
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公开(公告)号：US11589215B2
公开(公告)日：2023-02-21
申请号：US17534892
申请日：2021-11-24
发明人： Hamid Saber , Jungmin Park , Jung Hyun Bae
IPC分类号： H04W8/24 , H04W76/11 , H04L1/00 , H04L1/1812 , H04W72/0446 , H04W72/04 , H04W72/12 , H04W72/14
摘要： An apparatus and method are provided for counting a number of uplink and/or downlink channels per slot for a UE capability in order to determine a maximum number of channels a UE is capable of processing per slot. A UE counts all PDSCHs or PUSCHs that the UE is scheduled or configured to receive or transmit, respectively, except for exception 1, exception 2, or exception 3, wherein a beginning of the symbol j is at least N_2 symbols after an end of the symbol i, the SPS PDSCH is not counted, and generates UE capability information based on the counted number of the PDSCH or PUSCH per slot.
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公开(公告)号：US11552400B2
公开(公告)日：2023-01-10
申请号：US17215622
申请日：2021-03-29
发明人： Dongsik Shin , Youngsub Kim , Seungho Choi , Jungmin Park , Jongwook Zeong , Jonghwa Kim , Youngju Lee
摘要： The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). According to embodiments in the present disclosure, an antenna device for dual polarization of a wireless communication system, comprises a print circuit board (PCB); a first feeding line configured to provide a first polarization signal; a second feeding configured to provide a second polarization signal; and a patch antenna comprising a radiating region and cutting regions. Objects corresponding to the cutting regions are disposed to support the radiating region on the PCB.
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公开(公告)号：US20220361179A1
公开(公告)日：2022-11-10
申请号：US17661926
申请日：2022-05-04
发明人： Yangsoo Kwon , Jungmin Park , Kunil Yum
摘要： An operating method of a user equipment communicating with a base station based on a fifth-generation (5G) mobile network includes setting at least one value of at least one time parameter based on an activated function in the 5G mobile network; determining a processing time for a physical downlink shared channel (PDSCH) from the base station based on the at least one value; determining a capability of the user equipment by comparing the processing time with a reference time; and transmitting information including the capability of the user equipment to the first base station.
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公开(公告)号：US11467148B2
公开(公告)日：2022-10-11
申请号：US16137026
申请日：2018-09-20
发明人： Jungmin Park , Byungchul Kim , Youngju Lee , Dongkyu Choi , Junghwan Choi , Seungku Han
IPC分类号： H04B17/30 , G01N33/00 , H04B17/10 , G01S7/48 , H04B17/391
摘要： A method for identifying radio signal transmission characteristics in a wireless communication system and an apparatus therefor are provided. The method may include identifying a signal transmission site, identifying a signal reception site, finding an area where a tree is present between the signal transmission site and the signal reception site, checking characteristics of the crown of the tree and characteristics of the trunk of the tree, and examining transmission characteristics of a radio signal sent from the signal transmission site to the signal reception site on the basis of the characteristics of the crown and the trunk. The method and apparatus relate to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for internet of things (IoT), and may be applied to intelligent services based on the 5G communication and the IoT-related technologies.
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公开(公告)号：US11424316B2
公开(公告)日：2022-08-23
申请号：US16916263
申请日：2020-06-30
发明人： Jungmin Park , Haeryong Kim , Younsoo Kim , Younggeun Park
IPC分类号： H01L49/02 , H01L27/108
摘要： A capacitor structure and a semiconductor device, the capacitor structure including a lower electrode on a substrate; a seed layer on the lower electrode; a dielectric layer on the seed layer; and an upper electrode on the dielectric layer, wherein the dielectric layer includes a ternary metal oxide having a chemical formula of ABO3, in which each of A and B is independently a metal, and the seed layer includes a ternary metal oxide containing the same elements as that of the dielectric layer, the ternary metal oxide having a chemical formula of ABO3-x, in which each of A and B is the same metal as A and B of the ternary metal oxide having a chemical formula of ABO3, 0
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