公开(公告)号：US20220246528A1

公开(公告)日：2022-08-04

申请号：US17451725

申请日：2021-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyu Choi ,  Seongheum Choi ,  Daeyong Kim ,  Rakhwan Kim

IPC: H01L23/535 ,  H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L29/66

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate; a gate structure extending in a second direction on the substrate, intersecting the active region, and including a gate electrode, source/drain region disposed on the active region on at least one side of the gate structure, a first contact structure connected to the source/drain region; a first gate contact structure disposed on and connected to the gate electrode; a second contact structure disposed on and connected to the first contact structure; and a second gate contact structure disposed on and connected to the first gate contact structure. The second contact structure and/or the second gate contact structure may include an upper metal layer and a metal liner covering a lower surface and side surfaces of the upper metal layer. An external surface of the metal liner may have surface roughness.

公开(公告)号：US12176290B2

公开(公告)日：2024-12-24

申请号：US17451725

申请日：2021-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyu Choi ,  Seongheum Choi ,  Daeyong Kim ,  Rakhwan Kim

IPC: H01L23/535 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate; a gate structure extending in a second direction on the substrate, intersecting the active region, and including a gate electrode, source/drain region disposed on the active region on at least one side of the gate structure, a first contact structure connected to the source/drain region; a first gate contact structure disposed on and connected to the gate electrode; a second contact structure disposed on and connected to the first contact structure; and a second gate contact structure disposed on and connected to the first gate contact structure. The second contact structure and/or the second gate contact structure may include an upper metal layer and a metal liner covering a lower surface and side surfaces of the upper metal layer. An external surface of the metal liner may have surface roughness.