公开(公告)号：US20220246528A1

公开(公告)日：2022-08-04

申请号：US17451725

申请日：2021-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyu Choi ,  Seongheum Choi ,  Daeyong Kim ,  Rakhwan Kim

IPC: H01L23/535 ,  H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L29/66

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate; a gate structure extending in a second direction on the substrate, intersecting the active region, and including a gate electrode, source/drain region disposed on the active region on at least one side of the gate structure, a first contact structure connected to the source/drain region; a first gate contact structure disposed on and connected to the gate electrode; a second contact structure disposed on and connected to the first contact structure; and a second gate contact structure disposed on and connected to the first gate contact structure. The second contact structure and/or the second gate contact structure may include an upper metal layer and a metal liner covering a lower surface and side surfaces of the upper metal layer. An external surface of the metal liner may have surface roughness.

公开(公告)号：US12176290B2

公开(公告)日：2024-12-24

申请号：US17451725

申请日：2021-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyu Choi ,  Seongheum Choi ,  Daeyong Kim ,  Rakhwan Kim

IPC: H01L23/535 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate; a gate structure extending in a second direction on the substrate, intersecting the active region, and including a gate electrode, source/drain region disposed on the active region on at least one side of the gate structure, a first contact structure connected to the source/drain region; a first gate contact structure disposed on and connected to the gate electrode; a second contact structure disposed on and connected to the first contact structure; and a second gate contact structure disposed on and connected to the first gate contact structure. The second contact structure and/or the second gate contact structure may include an upper metal layer and a metal liner covering a lower surface and side surfaces of the upper metal layer. An external surface of the metal liner may have surface roughness.

公开(公告)号：US20240145387A1

公开(公告)日：2024-05-02

申请号：US18329784

申请日：2023-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaemoon Lee ,  Jeongik Kim ,  Sungyu Choi ,  Rakhwan Kim ,  Chunghwan Shin

IPC: H01L23/528 ,  H01L23/522 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L23/5283 ,  H01L23/5226 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696 ,  H01L29/66545

Abstract: A semiconductor device includes a gate structure disposed on a substrate and a contact plug. The contact plug includes a first conductive pattern contacting an upper surface of the first gate structure and a second conductive pattern contacting an upper surface of the first conductive pattern. An upper surface of a central portion of the first conductive pattern is higher than an upper surface of an edge portion of the first conductive pattern. A lower surface of a central portion of the second conductive pattern is higher than a lower surface of an edge portion of the second conductive pattern.