公开(公告)号：US20240379345A1

公开(公告)日：2024-11-14

申请号：US18394524

申请日：2023-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongmin Hwang ,  Jongseong Ko ,  Daeyong Kim ,  Donghyun Kim ,  Jisu Kim ,  Pyungkang Kim ,  Kihong Park ,  Jungjoon Park ,  Jungjun Park ,  Jooyoung Park ,  Junhyeok Park ,  Hoseok Song ,  Chiho Ahn ,  Kongwoo Lee ,  Hyunyoung Lee ,  Chuyoung Choung

IPC: H01L21/02 ,  G06T7/00

Abstract: An apparatus for cleaning a semiconductor fabrication chamber may include a cleaning module, an inspection module and a drive module. The cleaning module may clean an inner area of the semiconductor fabrication chamber in a non-contact manner. The inspection module may be configured to inspect a cleaning of the semiconductor fabrication chamber by the cleaning module. The drive module may be configured to move the cleaning module and the inspection module in the semiconductor fabrication chamber. Thus, the non-contact type cleaning module may effectively remove the contaminant on an inner wall of the semiconductor fabrication chamber having a complicated shape and/or a part on the inner wall of the semiconductor fabrication chamber having a complicated shape.

公开(公告)号：US12080797B2

公开(公告)日：2024-09-03

申请号：US17467656

申请日：2021-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dohyun Lee ,  Dongwoo Kim ,  Daeyong Kim ,  Rakhwan Kim

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/7851 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/41791 ,  H01L29/66553

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes an active region, a plurality of channel layers, gate electrodes, a source/drain region, and a contact structure. The active region is disposed on a substrate and extends in a first direction. The plurality of channel layers are disposed on the active region to be spaced apart from each other vertically. The gate electrodes are disposed on the substrate, intersecting the active region and the plurality of channel layers, extending in a third direction, and surrounding the plurality of channel layers. The source/drain region is disposed on the active region on at least one side of the gate electrodes, and contacting the plurality of channel layers. The contact structure is disposed between the gate electrodes, extending in the second direction, and contacting the source/drain region.

公开(公告)号：US11581253B2

公开(公告)日：2023-02-14

申请号：US17503723

申请日：2021-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghee Seo ,  Heonbok Lee ,  Tae-Yeol Kim ,  Daeyong Kim ,  Dohyun Lee

IPC: H01L23/498 ,  H01L29/78

Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.

公开(公告)号：US20220246528A1

公开(公告)日：2022-08-04

申请号：US17451725

申请日：2021-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyu Choi ,  Seongheum Choi ,  Daeyong Kim ,  Rakhwan Kim

IPC: H01L23/535 ,  H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L29/66

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate; a gate structure extending in a second direction on the substrate, intersecting the active region, and including a gate electrode, source/drain region disposed on the active region on at least one side of the gate structure, a first contact structure connected to the source/drain region; a first gate contact structure disposed on and connected to the gate electrode; a second contact structure disposed on and connected to the first contact structure; and a second gate contact structure disposed on and connected to the first gate contact structure. The second contact structure and/or the second gate contact structure may include an upper metal layer and a metal liner covering a lower surface and side surfaces of the upper metal layer. An external surface of the metal liner may have surface roughness.

公开(公告)号：US11869836B2

公开(公告)日：2024-01-09

申请号：US18105955

申请日：2023-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghee Seo ,  Heonbok Lee ,  Tae-Yeol Kim ,  Daeyong Kim ,  Dohyun Lee

IPC: H01L23/49 ,  H01L29/78 ,  H01L23/498

CPC classification number: H01L23/49844 ,  H01L23/49811 ,  H01L29/78

Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.

公开(公告)号：US20240379384A1

公开(公告)日：2024-11-14

申请号：US18608633

申请日：2024-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongseong Ko ,  Daeyong Kim ,  Donghyun Kim ,  Pyungkang Kim ,  Kihong Park ,  Jungjoon Park ,  Jungjun Park ,  Jooyoung Park ,  Hoseok Song ,  Kongwoo Lee ,  Hyunyoung Lee ,  Chuyoung Choung ,  Jeongmin Hwang ,  Jisu Kim ,  Junhyeok Park ,  Chiho Ahn

IPC: H01L21/67

Abstract: The present disclosure relates to wire grippers, wire processing apparatuses, and wire processing methods. An example wire gripper comprises a gripper body, a wire supply in the gripper body and supplying a wire, a wire cutting section including a cutter that cuts the wire supplied from the wire supply, a pressure roller below the wire supply and providing a guide groove to guide the wire supplied from the wire supply, a twister on a side of the pressure roller, and a reloader that drives an end of the wire to move from the wire supply to the twister. The twister holds and twists the end of the wire guided by the pressure roller.

公开(公告)号：US11152297B2

公开(公告)日：2021-10-19

申请号：US16893540

申请日：2020-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghee Seo ,  Heonbok Lee ,  Tae-Yeol Kim ,  Daeyong Kim ,  Dohyun Lee

IPC: H01L29/78 ,  H01L23/498

Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.

公开(公告)号：US12176290B2

公开(公告)日：2024-12-24

申请号：US17451725

申请日：2021-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyu Choi ,  Seongheum Choi ,  Daeyong Kim ,  Rakhwan Kim

IPC: H01L23/535 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate; a gate structure extending in a second direction on the substrate, intersecting the active region, and including a gate electrode, source/drain region disposed on the active region on at least one side of the gate structure, a first contact structure connected to the source/drain region; a first gate contact structure disposed on and connected to the gate electrode; a second contact structure disposed on and connected to the first contact structure; and a second gate contact structure disposed on and connected to the first gate contact structure. The second contact structure and/or the second gate contact structure may include an upper metal layer and a metal liner covering a lower surface and side surfaces of the upper metal layer. An external surface of the metal liner may have surface roughness.

公开(公告)号：US20240375293A1

公开(公告)日：2024-11-14

申请号：US18437837

申请日：2024-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungjoon Park ,  Jongseong Ko ,  Daeyong Kim ,  Donghyun Kim ,  Jisu Kim ,  Pyungkang Kim ,  Kihong Park ,  Jungjun Park ,  Jooyoung Park ,  Junhyeok Park ,  Hoseok Song ,  Chiho Ahn ,  Kongwoo Lee ,  Hyunyoung Lee ,  Chuyoung Choung ,  Jeongmin Hwang

IPC: B25J15/00 ,  B25J13/08

Abstract: An in-chamber maintenance apparatus may include a stage module including a stage body in a chamber having a hollow interior, an XY stage mounted on an upper surface of the stage body and movable in an X-axis and a Y-axis direction perpendicular to each other, and a first driving portion configured to drive the XY stage, and a gripper module including a gripper body coupled to an upper surface of the XY stage, a gripping portion supported by the gripper body and configured to move up and down and rotate with respect to a Z-axis perpendicular to the X-axis and the Y-axis to be inserted into the hollow interior, and a second driving portion configured to drive the gripping portion.

公开(公告)号：US20220216339A1

公开(公告)日：2022-07-07

申请号：US17467656

申请日：2021-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dohyun Lee ,  Dongwoo Kim ,  Daeyong Kim ,  Rakhwan Kim

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/10 ,  H01L29/08 ,  H01L29/66 ,  H01L23/522

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes an active region, a plurality of channel layers, gate electrodes, a source/drain region, and a contact structure. The active region is disposed on a substrate and extends in a first direction. The plurality of channel layers are disposed on the active region to be spaced apart from each other vertically. The gate electrodes are disposed on the substrate, intersecting the active region and the plurality of channel layers, extending in a third direction, and surrounding the plurality of channel layers. The source/drain region is disposed on the active region on at least one side of the gate electrodes, and contacting the plurality of channel layers. The contact structure is disposed between the gate electrodes, extending in the second direction, and contacting the source/drain region.