公开(公告)号：US20230349050A1

公开(公告)日：2023-11-02

申请号：US18301347

申请日：2023-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungsuk MOON ,  Seungkoo SHIN ,  Minjung KIM ,  Sanghwang PARK

IPC: C23C28/00 ,  G01N21/3563 ,  C23C14/18 ,  C23C16/40 ,  C23C16/24 ,  C23C14/02 ,  C23F1/16 ,  C23C14/58 ,  C23C16/56

CPC classification number: C23C28/322 ,  G01N21/3563 ,  C23C14/185 ,  C23C16/401 ,  C23C16/24 ,  C23C14/025 ,  C23F1/16 ,  C23C14/5873 ,  C23C16/56 ,  G01N2021/3595

Abstract: A method of fabricating sample wafers includes forming silver particles on a surface of a wafer, forming nanowires on the wafer, removing the silver particles, and terminating dangling bond sites from surfaces of the nanowires with deuterium.